Thermal Analysis of the Double-Crucible Method in Continuous Silicon Czochralski Processing: I. Experimental Analysis

Naoki Ono, Michio Kida, Yoshiaki Arai, Kensho Sahira

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Abstract

In the double-crucible method, the temperatures of the silicon melt and of the surface of the quartz crucible were measured and compared to those of the single crucible case. The temperature of the crucible is required for the boundary conditions of the numerical simulations. The temperature gradient was measured across the thickness of the inner quartz crucible. The temperature at the outer surface of this crucible was higher by 20-25°C than in the case of the single crucible. The influence of the fed material silicon on the melt temperature, and the temperature response of the CZ system to the heater power change were also investigated.

Original languageEnglish
Pages (from-to)2101-2105
Number of pages5
JournalJournal of the Electrochemical Society
Volume140
Issue number7
DOIs
Publication statusPublished - 1993 Jul

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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