Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

Kwang Soo Seol, Toshifumi Karasawa, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


When ion-implanted thermal SiO2 films are irradiated by photons at 5.0 eV, photoluminescence (PL) appears at 4.3, 2.7, and 1.9 eV. These PLs are related with defects in the SiO2 films. When the SiO2 films are annealed at high temperatures, both the 4.3 and 2.7 eV PL intensities decrease gradually with an increase in the annealing temperature and disappear at 500°C, while the 1.9 eV PL increases or stays constant up to 400°C and suddenly disappears at 500°C. Such annealing behavior is not influenced by the annealing atmosphere. In the case of the films degassed in high vacuum before implantation, it is observed that the PL bands survive the annealing at 500°C. This result suggests that dissolved gases in the film play an important role in the annihilation of defects induced by ion implantation.

Original languageEnglish
Pages (from-to)193-195
Number of pages3
JournalMicroelectronic Engineering
Issue number1-4
Publication statusPublished - 1997 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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