Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

K. S. Seol, T. Karasawa, Y. Ohki, H. Nishikawa, M. Takiyama

Research output: Contribution to journalArticle

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)193-195
JournalMicroelectrons Engineering
Volume36
Publication statusPublished - 1997 Jan 1

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