Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

K. S. Seol, T. Karasawa, Y. Ohki, H. Nishikawa, M. Takiyama

Research output: Contribution to journalArticle

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)193-195
JournalMicroelectrons Engineering
Volume36
Publication statusPublished - 1997 Jan 1

Cite this

Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films. / Seol, K. S.; Karasawa, T.; Ohki, Y.; Nishikawa, H.; Takiyama, M.

In: Microelectrons Engineering, Vol. 36, 01.01.1997, p. 193-195.

Research output: Contribution to journalArticle

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AU - Seol, K. S.

AU - Karasawa, T.

AU - Ohki, Y.

AU - Nishikawa, H.

AU - Takiyama, M.

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JO - Microelectrons Engineering

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