Thermal stability of a Schottky diode fabricated with transfer-free deposition of multilayer graphene on n-GaN by solid-phase reactions

Md Sahab Uddin, Kazuyoshi Ueno

Research output: Research - peer-reviewArticle

Abstract

Multilayer graphene (MLG)/n-GaN Schottky diodes were fabricated by transfer-free deposition of MLG on n-GaN by solid-phase reactions with cobalt as a catalyst. The thermal stability of the diodes was determined from the current-voltage (I-V) characteristics after annealing the diodes in vacuum at 200-500 °C, at intervals of 100 °C. The diode characteristics evaluated using a thermionic emission model and Cheung's function using I-V data revealed that the Schottky barrier diode (SBD) fabricated with MLG as a Schottky contact on n-GaN showed better thermal stability than the conventional Ni/n-GaN SBD. The prevention of Au diffusion to n-GaN with MLG as a diffusion barrier layer and the unaffected interface reactions between n-GaN and MLG are possible reasons for the improved thermal stability, enabling potential application of this new diode in highpower and high-temperature operations.

LanguageEnglish
Article number07KD05
JournalJapanese Journal of Applied Physics
Volume56
Issue number7
DOIs
StatePublished - 2017 Jul 1

Fingerprint

Schottky diodes
solid phases
graphene
thermal stability
Graphene
Multilayers
Diodes
Thermodynamic stability
diodes
Schottky barrier diodes
thermionic emission
barrier layers
electric contacts
cobalt
intervals
catalysts
vacuum
annealing
electric potential
High temperature operations

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Thermal stability of a Schottky diode fabricated with transfer-free deposition of multilayer graphene on n-GaN by solid-phase reactions",
abstract = "Multilayer graphene (MLG)/n-GaN Schottky diodes were fabricated by transfer-free deposition of MLG on n-GaN by solid-phase reactions with cobalt as a catalyst. The thermal stability of the diodes was determined from the current-voltage (I-V) characteristics after annealing the diodes in vacuum at 200-500 °C, at intervals of 100 °C. The diode characteristics evaluated using a thermionic emission model and Cheung's function using I-V data revealed that the Schottky barrier diode (SBD) fabricated with MLG as a Schottky contact on n-GaN showed better thermal stability than the conventional Ni/n-GaN SBD. The prevention of Au diffusion to n-GaN with MLG as a diffusion barrier layer and the unaffected interface reactions between n-GaN and MLG are possible reasons for the improved thermal stability, enabling potential application of this new diode in highpower and high-temperature operations.",
author = "Uddin, {Md Sahab} and Kazuyoshi Ueno",
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publisher = "Japan Society of Applied Physics",
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N2 - Multilayer graphene (MLG)/n-GaN Schottky diodes were fabricated by transfer-free deposition of MLG on n-GaN by solid-phase reactions with cobalt as a catalyst. The thermal stability of the diodes was determined from the current-voltage (I-V) characteristics after annealing the diodes in vacuum at 200-500 °C, at intervals of 100 °C. The diode characteristics evaluated using a thermionic emission model and Cheung's function using I-V data revealed that the Schottky barrier diode (SBD) fabricated with MLG as a Schottky contact on n-GaN showed better thermal stability than the conventional Ni/n-GaN SBD. The prevention of Au diffusion to n-GaN with MLG as a diffusion barrier layer and the unaffected interface reactions between n-GaN and MLG are possible reasons for the improved thermal stability, enabling potential application of this new diode in highpower and high-temperature operations.

AB - Multilayer graphene (MLG)/n-GaN Schottky diodes were fabricated by transfer-free deposition of MLG on n-GaN by solid-phase reactions with cobalt as a catalyst. The thermal stability of the diodes was determined from the current-voltage (I-V) characteristics after annealing the diodes in vacuum at 200-500 °C, at intervals of 100 °C. The diode characteristics evaluated using a thermionic emission model and Cheung's function using I-V data revealed that the Schottky barrier diode (SBD) fabricated with MLG as a Schottky contact on n-GaN showed better thermal stability than the conventional Ni/n-GaN SBD. The prevention of Au diffusion to n-GaN with MLG as a diffusion barrier layer and the unaffected interface reactions between n-GaN and MLG are possible reasons for the improved thermal stability, enabling potential application of this new diode in highpower and high-temperature operations.

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