Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata H.Tabata, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, Y.Nunoshige Y.Nunoshige, A.Ogawa A.Ogawa, T.Nabatame T.Nabatame, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toroumi A.Toroumi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journal6th International Coference on Atomic Layer Deposition (Seoul, Korea)
Publication statusPublished - 2006 Jul 25

Cite this

H.Tabata, H. T., K.Segawa, K. S., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., ... Oishi, T. (2006). Thermal stability of ALD-grown Ru/HfON/Si capacitors. 6th International Coference on Atomic Layer Deposition (Seoul, Korea).