Thermal stability of GaN on (1 1 1) Si substrate

Hiroyasu Ishikawa, Kensaku Yamamoto, Takashi Egawa, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

160 Citations (Scopus)

Abstract

We studied thermal annealing effects of low-temperature-grown GaN (LT-GaN) on Si substrate by use of the two step growth technique. Difficulties were encountered when LT-GaN films were annealed up to the temperature of 1050°C on Si substrate. However, the LT-GaN on sapphire was stable after the same annealing condition. The decomposition of LT-GaN and the wavy surface were observed. Thus, thermal stability of LT-GaN on Si was lower than that on sapphire. To improve this low thermal stability, LT-GaN on Si was coated by middle-temperature-grown GaN (MT-GaN). However, swellings were observed on the surface after annealing to the temperature of 1050°C and there were hollows, which indicated that the corrosion of Si occurred below the temperature of the melting point of Si, under swellings. Energy dispersive X-ray (EDX) analysis indicated that a large amount of Ga was detected in swellings. Ga is responsible for the corrosion of Si substrate and the possible reason for the formation of hollows was the meltback etching of Si by Ga.

Original languageEnglish
Pages (from-to)178-182
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Fingerprint

Thermodynamic stability
thermal stability
Substrates
swelling
Temperature
annealing
hollow
corrosion
sapphire
Swelling
Aluminum Oxide
Annealing
temperature
Sapphire
melting points
Corrosion
etching
Energy dispersive X ray analysis
decomposition
Melting point

Keywords

  • Ga droplets
  • Low-temperature grown GaN (LT-GaN)
  • Meltback etching
  • Si substrate
  • Thermal stability

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T., & Umeno, M. (1998). Thermal stability of GaN on (1 1 1) Si substrate. Journal of Crystal Growth, 189-190, 178-182.

Thermal stability of GaN on (1 1 1) Si substrate. / Ishikawa, Hiroyasu; Yamamoto, Kensaku; Egawa, Takashi; Soga, Tetsuo; Jimbo, Takashi; Umeno, Masayoshi.

In: Journal of Crystal Growth, Vol. 189-190, 15.06.1998, p. 178-182.

Research output: Contribution to journalArticle

Ishikawa, H, Yamamoto, K, Egawa, T, Soga, T, Jimbo, T & Umeno, M 1998, 'Thermal stability of GaN on (1 1 1) Si substrate', Journal of Crystal Growth, vol. 189-190, pp. 178-182.
Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M. Thermal stability of GaN on (1 1 1) Si substrate. Journal of Crystal Growth. 1998 Jun 15;189-190:178-182.
Ishikawa, Hiroyasu ; Yamamoto, Kensaku ; Egawa, Takashi ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi. / Thermal stability of GaN on (1 1 1) Si substrate. In: Journal of Crystal Growth. 1998 ; Vol. 189-190. pp. 178-182.
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AU - Ishikawa, Hiroyasu

AU - Yamamoto, Kensaku

AU - Egawa, Takashi

AU - Soga, Tetsuo

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

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N2 - We studied thermal annealing effects of low-temperature-grown GaN (LT-GaN) on Si substrate by use of the two step growth technique. Difficulties were encountered when LT-GaN films were annealed up to the temperature of 1050°C on Si substrate. However, the LT-GaN on sapphire was stable after the same annealing condition. The decomposition of LT-GaN and the wavy surface were observed. Thus, thermal stability of LT-GaN on Si was lower than that on sapphire. To improve this low thermal stability, LT-GaN on Si was coated by middle-temperature-grown GaN (MT-GaN). However, swellings were observed on the surface after annealing to the temperature of 1050°C and there were hollows, which indicated that the corrosion of Si occurred below the temperature of the melting point of Si, under swellings. Energy dispersive X-ray (EDX) analysis indicated that a large amount of Ga was detected in swellings. Ga is responsible for the corrosion of Si substrate and the possible reason for the formation of hollows was the meltback etching of Si by Ga.

AB - We studied thermal annealing effects of low-temperature-grown GaN (LT-GaN) on Si substrate by use of the two step growth technique. Difficulties were encountered when LT-GaN films were annealed up to the temperature of 1050°C on Si substrate. However, the LT-GaN on sapphire was stable after the same annealing condition. The decomposition of LT-GaN and the wavy surface were observed. Thus, thermal stability of LT-GaN on Si was lower than that on sapphire. To improve this low thermal stability, LT-GaN on Si was coated by middle-temperature-grown GaN (MT-GaN). However, swellings were observed on the surface after annealing to the temperature of 1050°C and there were hollows, which indicated that the corrosion of Si occurred below the temperature of the melting point of Si, under swellings. Energy dispersive X-ray (EDX) analysis indicated that a large amount of Ga was detected in swellings. Ga is responsible for the corrosion of Si substrate and the possible reason for the formation of hollows was the meltback etching of Si by Ga.

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