Thermal stability of GaN on (111)Si substrate

H. Ishikawa, K. Yamamoto, T. Egawa, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

163 Citations (Scopus)
Original languageEnglish
Pages (from-to)178-182
JournalJ. Crystal Growth
Volume189/190
Publication statusPublished - 1998 Jun 1

Cite this

Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T., & Umeno, M. (1998). Thermal stability of GaN on (111)Si substrate. J. Crystal Growth, 189/190, 178-182.

Thermal stability of GaN on (111)Si substrate. / Ishikawa, H.; Yamamoto, K.; Egawa, T.; Soga, T.; Jimbo, T.; Umeno, M.

In: J. Crystal Growth, Vol. 189/190, 01.06.1998, p. 178-182.

Research output: Contribution to journalArticle

Ishikawa, H, Yamamoto, K, Egawa, T, Soga, T, Jimbo, T & Umeno, M 1998, 'Thermal stability of GaN on (111)Si substrate', J. Crystal Growth, vol. 189/190, pp. 178-182.
Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M. Thermal stability of GaN on (111)Si substrate. J. Crystal Growth. 1998 Jun 1;189/190:178-182.
Ishikawa, H. ; Yamamoto, K. ; Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M. / Thermal stability of GaN on (111)Si substrate. In: J. Crystal Growth. 1998 ; Vol. 189/190. pp. 178-182.
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