| Original language | English |
|---|---|
| Pages (from-to) | 178-182 |
| Journal | J. Crystal Growth |
| Volume | 189/190 |
| Publication status | Published - 1998 Jun 1 |
Cite this
Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T., & Umeno, M. (1998). Thermal stability of GaN on (111)Si substrate. J. Crystal Growth, 189/190, 178-182.
Thermal stability of GaN on (111)Si substrate. / Ishikawa, H.; Yamamoto, K.; Egawa, T.; Soga, T.; Jimbo, T.; Umeno, M.
In: J. Crystal Growth, Vol. 189/190, 01.06.1998, p. 178-182.Research output: Contribution to journal › Article
Ishikawa, H, Yamamoto, K, Egawa, T, Soga, T, Jimbo, T & Umeno, M 1998, 'Thermal stability of GaN on (111)Si substrate', J. Crystal Growth, vol. 189/190, pp. 178-182.
Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M. Thermal stability of GaN on (111)Si substrate. J. Crystal Growth. 1998 Jun 1;189/190:178-182.
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title = "Thermal stability of GaN on (111)Si substrate",
author = "H. Ishikawa and K. Yamamoto and T. Egawa and T. Soga and T. Jimbo and M. Umeno",
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T1 - Thermal stability of GaN on (111)Si substrate
AU - Ishikawa, H.
AU - Yamamoto, K.
AU - Egawa, T.
AU - Soga, T.
AU - Jimbo, T.
AU - Umeno, M.
PY - 1998/6/1
Y1 - 1998/6/1
M3 - Article
VL - 189/190
SP - 178
EP - 182
JO - J. Crystal Growth
JF - J. Crystal Growth
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