Abstract
The growth of the InGaN multiple-quantum-well light-emitting diodes (LEDs) on an AlN/sapphire template was discussed. It was found that the thermal stability of the LED was demonstrated by measurements of current-voltage, light output power-current and electroluminescence (EL) spectra at different temperatures. It was observed that the EL spectrum peak at 20 mA shifted to lower energy by 17.2 meV for the LED on the template upon increasing temperature. Analysis shows that the LED on template exhibited a higher output power and a better thermal stability with respect to the conventional LED on sapphire using a low-temperature GaN buffer layer.
| Original language | English |
|---|---|
| Pages (from-to) | 3170-3174 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 95 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2004 Mar 15 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)