Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, Takashi Jimbo

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The growth of the InGaN multiple-quantum-well light-emitting diodes (LEDs) on an AlN/sapphire template was discussed. It was found that the thermal stability of the LED was demonstrated by measurements of current-voltage, light output power-current and electroluminescence (EL) spectra at different temperatures. It was observed that the EL spectrum peak at 20 mA shifted to lower energy by 17.2 meV for the LED on the template upon increasing temperature. Analysis shows that the LED on template exhibited a higher output power and a better thermal stability with respect to the conventional LED on sapphire using a low-temperature GaN buffer layer.

Original languageEnglish
Pages (from-to)3170-3174
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number6
DOIs
Publication statusPublished - 2004 Mar 15
Externally publishedYes

Fingerprint

sapphire
thermal stability
light emitting diodes
templates
quantum wells
electroluminescence
output
buffers
temperature
electric potential
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template. / Zhang, Baijun; Egawa, Takashi; Ishikawa, Hiroyasu; Liu, Yang; Jimbo, Takashi.

In: Journal of Applied Physics, Vol. 95, No. 6, 15.03.2004, p. 3170-3174.

Research output: Contribution to journalArticle

Zhang, Baijun ; Egawa, Takashi ; Ishikawa, Hiroyasu ; Liu, Yang ; Jimbo, Takashi. / Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 6. pp. 3170-3174.
@article{953538b9e38b4bc9ad3a1efc601b8fd0,
title = "Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template",
abstract = "The growth of the InGaN multiple-quantum-well light-emitting diodes (LEDs) on an AlN/sapphire template was discussed. It was found that the thermal stability of the LED was demonstrated by measurements of current-voltage, light output power-current and electroluminescence (EL) spectra at different temperatures. It was observed that the EL spectrum peak at 20 mA shifted to lower energy by 17.2 meV for the LED on the template upon increasing temperature. Analysis shows that the LED on template exhibited a higher output power and a better thermal stability with respect to the conventional LED on sapphire using a low-temperature GaN buffer layer.",
author = "Baijun Zhang and Takashi Egawa and Hiroyasu Ishikawa and Yang Liu and Takashi Jimbo",
year = "2004",
month = "3",
day = "15",
doi = "10.1063/1.1646442",
language = "English",
volume = "95",
pages = "3170--3174",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

AU - Zhang, Baijun

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Liu, Yang

AU - Jimbo, Takashi

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The growth of the InGaN multiple-quantum-well light-emitting diodes (LEDs) on an AlN/sapphire template was discussed. It was found that the thermal stability of the LED was demonstrated by measurements of current-voltage, light output power-current and electroluminescence (EL) spectra at different temperatures. It was observed that the EL spectrum peak at 20 mA shifted to lower energy by 17.2 meV for the LED on the template upon increasing temperature. Analysis shows that the LED on template exhibited a higher output power and a better thermal stability with respect to the conventional LED on sapphire using a low-temperature GaN buffer layer.

AB - The growth of the InGaN multiple-quantum-well light-emitting diodes (LEDs) on an AlN/sapphire template was discussed. It was found that the thermal stability of the LED was demonstrated by measurements of current-voltage, light output power-current and electroluminescence (EL) spectra at different temperatures. It was observed that the EL spectrum peak at 20 mA shifted to lower energy by 17.2 meV for the LED on the template upon increasing temperature. Analysis shows that the LED on template exhibited a higher output power and a better thermal stability with respect to the conventional LED on sapphire using a low-temperature GaN buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=1842530940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842530940&partnerID=8YFLogxK

U2 - 10.1063/1.1646442

DO - 10.1063/1.1646442

M3 - Article

AN - SCOPUS:1842530940

VL - 95

SP - 3170

EP - 3174

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -