Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, Takashi Jimbo

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31 Citations (Scopus)


The growth of the InGaN multiple-quantum-well light-emitting diodes (LEDs) on an AlN/sapphire template was discussed. It was found that the thermal stability of the LED was demonstrated by measurements of current-voltage, light output power-current and electroluminescence (EL) spectra at different temperatures. It was observed that the EL spectrum peak at 20 mA shifted to lower energy by 17.2 meV for the LED on the template upon increasing temperature. Analysis shows that the LED on template exhibited a higher output power and a better thermal stability with respect to the conventional LED on sapphire using a low-temperature GaN buffer layer.

Original languageEnglish
Pages (from-to)3170-3174
Number of pages5
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2004 Mar 15
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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