Abstract
Platinum (Pt) films were widely used as an electrode in device applications of ferroelectric thin films. However, the surface morphology and microstructure were deformed during ferroelectric layer preparation. In this study, consequently, thermal stability of Pt bottom electrode for ferroelectric bismuth titanate (Bi 4 Ti 3 O 12 ) thin film fabrication was investigated. The deposited Pt film with thick Ti adhesion layer exhibits the different aspect areas, which contain Ti and/or Si element diffused into Pt grain boundaries. Therefore, the adhesion layer thickness was thinned as much as possible. Compressive stress was relaxed by hillock formation in plastic deformation region. Therefore, It is important to maintain the tensile stress from the substrate during the ferroelectric thin film formation. Bi 4 Ti 3 O 12 thin films deposited on stabilized Pt bottom electrode, exhibit superior dielectric properties. The deposited film exhibited ferroelectric properties. The polarization value at zero field of the strongly c-axis oriented one was 1.75 C/cm 2 . We think that the choke of silicon and/or titanium elements, diffused into Pt electrode, were effective against suppress hillock formation.
| Original language | English |
|---|---|
| Title of host publication | Integrated Ferroelectrics |
| Pages | 235-243 |
| Number of pages | 9 |
| Volume | 79 |
| Edition | 1 |
| DOIs | |
| Publication status | Published - 2006 Nov 1 |
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Keywords
- Bismuth titanate
- Platinum bottom electrode
- Tensile stress
- Thermal stability
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Thermal stability of platinum bottom electrode for bismuth titanate thin films. / Yamaguchi, Masaki; Yamamoto, Asa; Masuda, Yoichiro.
Integrated Ferroelectrics. Vol. 79 1. ed. 2006. p. 235-243.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Thermal stability of platinum bottom electrode for bismuth titanate thin films
AU - Yamaguchi, Masaki
AU - Yamamoto, Asa
AU - Masuda, Yoichiro
PY - 2006/11/1
Y1 - 2006/11/1
N2 - Platinum (Pt) films were widely used as an electrode in device applications of ferroelectric thin films. However, the surface morphology and microstructure were deformed during ferroelectric layer preparation. In this study, consequently, thermal stability of Pt bottom electrode for ferroelectric bismuth titanate (Bi 4 Ti 3 O 12 ) thin film fabrication was investigated. The deposited Pt film with thick Ti adhesion layer exhibits the different aspect areas, which contain Ti and/or Si element diffused into Pt grain boundaries. Therefore, the adhesion layer thickness was thinned as much as possible. Compressive stress was relaxed by hillock formation in plastic deformation region. Therefore, It is important to maintain the tensile stress from the substrate during the ferroelectric thin film formation. Bi 4 Ti 3 O 12 thin films deposited on stabilized Pt bottom electrode, exhibit superior dielectric properties. The deposited film exhibited ferroelectric properties. The polarization value at zero field of the strongly c-axis oriented one was 1.75 C/cm 2 . We think that the choke of silicon and/or titanium elements, diffused into Pt electrode, were effective against suppress hillock formation.
AB - Platinum (Pt) films were widely used as an electrode in device applications of ferroelectric thin films. However, the surface morphology and microstructure were deformed during ferroelectric layer preparation. In this study, consequently, thermal stability of Pt bottom electrode for ferroelectric bismuth titanate (Bi 4 Ti 3 O 12 ) thin film fabrication was investigated. The deposited Pt film with thick Ti adhesion layer exhibits the different aspect areas, which contain Ti and/or Si element diffused into Pt grain boundaries. Therefore, the adhesion layer thickness was thinned as much as possible. Compressive stress was relaxed by hillock formation in plastic deformation region. Therefore, It is important to maintain the tensile stress from the substrate during the ferroelectric thin film formation. Bi 4 Ti 3 O 12 thin films deposited on stabilized Pt bottom electrode, exhibit superior dielectric properties. The deposited film exhibited ferroelectric properties. The polarization value at zero field of the strongly c-axis oriented one was 1.75 C/cm 2 . We think that the choke of silicon and/or titanium elements, diffused into Pt electrode, were effective against suppress hillock formation.
KW - Bismuth titanate
KW - Platinum bottom electrode
KW - Tensile stress
KW - Thermal stability
UR - http://www.scopus.com/inward/record.url?scp=33745763263&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33745763263&partnerID=8YFLogxK
U2 - 10.1080/10584580600659894
DO - 10.1080/10584580600659894
M3 - Chapter
AN - SCOPUS:33745763263
VL - 79
SP - 235
EP - 243
BT - Integrated Ferroelectrics
ER -