Thermoelectric properties of Al-doped ZnO thin films

S. Saini, P. Mele, H. Honda, K. Matsumoto, K. Miyazaki, A. Ichinose

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.

Original languageEnglish
Pages (from-to)2145-2150
Number of pages6
JournalJournal of Electronic Materials
Volume43
Issue number6
DOIs
Publication statusPublished - 2014

Keywords

  • PLD
  • Seebeck
  • Thermoelectric
  • ZnO thin films
  • power factor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Saini, S., Mele, P., Honda, H., Matsumoto, K., Miyazaki, K., & Ichinose, A. (2014). Thermoelectric properties of Al-doped ZnO thin films. Journal of Electronic Materials, 43(6), 2145-2150. https://doi.org/10.1007/s11664-014-2992-x