Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Hajime Kiyono, Toshiki Sakai, Mari Takahashi, Shiro Shimada

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O 3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 8001000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).

Original languageEnglish
Pages (from-to)2823-2827
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number19
DOIs
Publication statusPublished - 2010 Sep 15
Externally publishedYes

Fingerprint

Nitridation
Thermogravimetric analysis
crystal surfaces
vapors
decomposition
atmospheres
kinetics
Powders
temperature
Vapors
Decomposition
Crystals
Kinetics

Keywords

  • A1. Growth models
  • A2. Growth from vapor
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3. / Kiyono, Hajime; Sakai, Toshiki; Takahashi, Mari; Shimada, Shiro.

In: Journal of Crystal Growth, Vol. 312, No. 19, 15.09.2010, p. 2823-2827.

Research output: Contribution to journalArticle

@article{964b12375118451a8bc5d99f6e856c40,
title = "Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3",
abstract = "Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O 3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 8001000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).",
keywords = "A1. Growth models, A2. Growth from vapor, B1. Nitrides",
author = "Hajime Kiyono and Toshiki Sakai and Mari Takahashi and Shiro Shimada",
year = "2010",
month = "9",
day = "15",
doi = "10.1016/j.jcrysgro.2010.06.021",
language = "English",
volume = "312",
pages = "2823--2827",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "19",

}

TY - JOUR

T1 - Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

AU - Kiyono, Hajime

AU - Sakai, Toshiki

AU - Takahashi, Mari

AU - Shimada, Shiro

PY - 2010/9/15

Y1 - 2010/9/15

N2 - Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O 3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 8001000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).

AB - Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O 3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 8001000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).

KW - A1. Growth models

KW - A2. Growth from vapor

KW - B1. Nitrides

UR - http://www.scopus.com/inward/record.url?scp=77956187362&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956187362&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.06.021

DO - 10.1016/j.jcrysgro.2010.06.021

M3 - Article

VL - 312

SP - 2823

EP - 2827

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 19

ER -