Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Hajime Kiyono, Toshiki Sakai, Mari Takahashi, Shiro Shimada

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Abstract

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O 3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 8001000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).

Original languageEnglish
Pages (from-to)2823-2827
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number19
DOIs
Publication statusPublished - 2010 Sep 15
Externally publishedYes

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Keywords

  • A1. Growth models
  • A2. Growth from vapor
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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