Thick and large area PIN diodes for hard X-ray astronomy

N. Ota, T. Murakami, M. Sugizaki, M. Kaneda, T. Tamura, H. Ozawa, T. Kamae, K. Makishima, T. Takahashi, M. Tashiro, Y. Fukazawa, J. Kataoka, K. Yamaoka, S. Kubo, C. Tanihata, Y. Uchiyama, K. Matsuzaki, N. Iyomoto, M. Kokubun, T. Nakazawa & 13 others Aya Kubota, T. Mizuno, Y. Matsumoto, N. Isobe, Y. Terada, M. Sugiho, T. Onishi, H. Kubo, H. Ikeda, M. Nomachi, T. Ohsugi, M. Muramatsu, H. Akahori

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

Original languageEnglish
Pages (from-to)291-296
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume436
Issue number1-2
DOIs
Publication statusPublished - 1999 Oct 21
Externally publishedYes

Fingerprint

Astronomy
astronomy
Diodes
diodes
X rays
junction diodes
purity
depletion
x rays
detectors
room temperature
Satellites
Detectors
energy
Temperature

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Thick and large area PIN diodes for hard X-ray astronomy. / Ota, N.; Murakami, T.; Sugizaki, M.; Kaneda, M.; Tamura, T.; Ozawa, H.; Kamae, T.; Makishima, K.; Takahashi, T.; Tashiro, M.; Fukazawa, Y.; Kataoka, J.; Yamaoka, K.; Kubo, S.; Tanihata, C.; Uchiyama, Y.; Matsuzaki, K.; Iyomoto, N.; Kokubun, M.; Nakazawa, T.; Kubota, Aya; Mizuno, T.; Matsumoto, Y.; Isobe, N.; Terada, Y.; Sugiho, M.; Onishi, T.; Kubo, H.; Ikeda, H.; Nomachi, M.; Ohsugi, T.; Muramatsu, M.; Akahori, H.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 436, No. 1-2, 21.10.1999, p. 291-296.

Research output: Contribution to journalArticle

Ota, N, Murakami, T, Sugizaki, M, Kaneda, M, Tamura, T, Ozawa, H, Kamae, T, Makishima, K, Takahashi, T, Tashiro, M, Fukazawa, Y, Kataoka, J, Yamaoka, K, Kubo, S, Tanihata, C, Uchiyama, Y, Matsuzaki, K, Iyomoto, N, Kokubun, M, Nakazawa, T, Kubota, A, Mizuno, T, Matsumoto, Y, Isobe, N, Terada, Y, Sugiho, M, Onishi, T, Kubo, H, Ikeda, H, Nomachi, M, Ohsugi, T, Muramatsu, M & Akahori, H 1999, 'Thick and large area PIN diodes for hard X-ray astronomy', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 436, no. 1-2, pp. 291-296. https://doi.org/10.1016/S0168-9002(99)00636-1
Ota, N. ; Murakami, T. ; Sugizaki, M. ; Kaneda, M. ; Tamura, T. ; Ozawa, H. ; Kamae, T. ; Makishima, K. ; Takahashi, T. ; Tashiro, M. ; Fukazawa, Y. ; Kataoka, J. ; Yamaoka, K. ; Kubo, S. ; Tanihata, C. ; Uchiyama, Y. ; Matsuzaki, K. ; Iyomoto, N. ; Kokubun, M. ; Nakazawa, T. ; Kubota, Aya ; Mizuno, T. ; Matsumoto, Y. ; Isobe, N. ; Terada, Y. ; Sugiho, M. ; Onishi, T. ; Kubo, H. ; Ikeda, H. ; Nomachi, M. ; Ohsugi, T. ; Muramatsu, M. ; Akahori, H. / Thick and large area PIN diodes for hard X-ray astronomy. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1999 ; Vol. 436, No. 1-2. pp. 291-296.
@article{9ed1525d72c14f18936094f8237d2cc4,
title = "Thick and large area PIN diodes for hard X-ray astronomy",
abstract = "Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.",
author = "N. Ota and T. Murakami and M. Sugizaki and M. Kaneda and T. Tamura and H. Ozawa and T. Kamae and K. Makishima and T. Takahashi and M. Tashiro and Y. Fukazawa and J. Kataoka and K. Yamaoka and S. Kubo and C. Tanihata and Y. Uchiyama and K. Matsuzaki and N. Iyomoto and M. Kokubun and T. Nakazawa and Aya Kubota and T. Mizuno and Y. Matsumoto and N. Isobe and Y. Terada and M. Sugiho and T. Onishi and H. Kubo and H. Ikeda and M. Nomachi and T. Ohsugi and M. Muramatsu and H. Akahori",
year = "1999",
month = "10",
day = "21",
doi = "10.1016/S0168-9002(99)00636-1",
language = "English",
volume = "436",
pages = "291--296",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Thick and large area PIN diodes for hard X-ray astronomy

AU - Ota, N.

AU - Murakami, T.

AU - Sugizaki, M.

AU - Kaneda, M.

AU - Tamura, T.

AU - Ozawa, H.

AU - Kamae, T.

AU - Makishima, K.

AU - Takahashi, T.

AU - Tashiro, M.

AU - Fukazawa, Y.

AU - Kataoka, J.

AU - Yamaoka, K.

AU - Kubo, S.

AU - Tanihata, C.

AU - Uchiyama, Y.

AU - Matsuzaki, K.

AU - Iyomoto, N.

AU - Kokubun, M.

AU - Nakazawa, T.

AU - Kubota, Aya

AU - Mizuno, T.

AU - Matsumoto, Y.

AU - Isobe, N.

AU - Terada, Y.

AU - Sugiho, M.

AU - Onishi, T.

AU - Kubo, H.

AU - Ikeda, H.

AU - Nomachi, M.

AU - Ohsugi, T.

AU - Muramatsu, M.

AU - Akahori, H.

PY - 1999/10/21

Y1 - 1999/10/21

N2 - Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

AB - Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

UR - http://www.scopus.com/inward/record.url?scp=0343496826&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343496826&partnerID=8YFLogxK

U2 - 10.1016/S0168-9002(99)00636-1

DO - 10.1016/S0168-9002(99)00636-1

M3 - Article

VL - 436

SP - 291

EP - 296

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1-2

ER -