Three-dimensional interconnect technology for ultra-compact MMICs

Makoto Hirano, Kenjiro Nishikawa, Ichihiko Toyoda, Shinji Aoyama, Suehiro Sugitani, Kimiyoshi Yamasaki

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A novel interconnect technology was reviewed, which was developed for three-dimensional (3-D) ultra-compact MMICs. Using O2/He RIE for the through hole and trench formation of a thick polyimide insulator layer, low-current electroplating for gold sidewall formation in the through-holes and the trenches, and ion-milling with WSiN metal stopper for gold patterning, a complete three-dimensional metal interconnection structure was built. We call this fabrication method as folded metal interconnection technology with thick insulator(FMIT). The 3-D interconnection structure involves vertical interconnection elements such as a wall-like microwire for shielding or coupling, and a pillar-like via-connection with multi-leveled planar interconnections in a 10-μm-thick polyimide matrix on an IC chip. The structure provides many passive functional elements and circuits in an extremely small area. This technology stages the next-generation of ultra-compact MMICs by offering the circuit designers great design flexibility and higher integration of circuits.

Original languageEnglish
Pages (from-to)1451-1455
Number of pages5
JournalSolid-State Electronics
Volume41
Issue number10
Publication statusPublished - 1997 Oct
Externally publishedYes

Fingerprint

Monolithic microwave integrated circuits
Metals
Polyimides
Gold
Networks (circuits)
polyimides
Reactive ion etching
Electroplating
Shielding
insulators
metals
gold
Ions
electroplating
Fabrication
low currents
shielding
flexibility
chips
fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hirano, M., Nishikawa, K., Toyoda, I., Aoyama, S., Sugitani, S., & Yamasaki, K. (1997). Three-dimensional interconnect technology for ultra-compact MMICs. Solid-State Electronics, 41(10), 1451-1455.

Three-dimensional interconnect technology for ultra-compact MMICs. / Hirano, Makoto; Nishikawa, Kenjiro; Toyoda, Ichihiko; Aoyama, Shinji; Sugitani, Suehiro; Yamasaki, Kimiyoshi.

In: Solid-State Electronics, Vol. 41, No. 10, 10.1997, p. 1451-1455.

Research output: Contribution to journalArticle

Hirano, M, Nishikawa, K, Toyoda, I, Aoyama, S, Sugitani, S & Yamasaki, K 1997, 'Three-dimensional interconnect technology for ultra-compact MMICs', Solid-State Electronics, vol. 41, no. 10, pp. 1451-1455.
Hirano M, Nishikawa K, Toyoda I, Aoyama S, Sugitani S, Yamasaki K. Three-dimensional interconnect technology for ultra-compact MMICs. Solid-State Electronics. 1997 Oct;41(10):1451-1455.
Hirano, Makoto ; Nishikawa, Kenjiro ; Toyoda, Ichihiko ; Aoyama, Shinji ; Sugitani, Suehiro ; Yamasaki, Kimiyoshi. / Three-dimensional interconnect technology for ultra-compact MMICs. In: Solid-State Electronics. 1997 ; Vol. 41, No. 10. pp. 1451-1455.
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