Three-dimensional masterslice MMIC on Si substrate

I. Toyoda, K. Nishikawa, T. Tokumitsu, K. Kamogawa, Ch Yamaguchi, M. Hirano, M. Aikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.

Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages113-116
Number of pages4
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC - Denver, CO, USA
Duration: 1997 Jun 81997 Jun 11

Other

OtherProceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC
CityDenver, CO, USA
Period97/6/897/6/11

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Media Technology

Cite this

Toyoda, I., Nishikawa, K., Tokumitsu, T., Kamogawa, K., Yamaguchi, C., Hirano, M., & Aikawa, M. (1997). Three-dimensional masterslice MMIC on Si substrate. In IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 113-116). Piscataway, NJ, United States: IEEE.