Three-dimensional masterslice MMIC on Si substrate

I. Toyoda, K. Nishikawa, T. Tokumitsu, K. Kamogawa, Ch Yamaguchi, M. Hirano, M. Aikawa

    Research output: Contribution to conferencePaper

    6 Citations (Scopus)

    Abstract

    This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.

    Original languageEnglish
    Pages113-116
    Number of pages4
    Publication statusPublished - 1997 Dec 1
    EventProceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC - Denver, CO, USA
    Duration: 1997 Jun 81997 Jun 11

    Other

    OtherProceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC
    CityDenver, CO, USA
    Period97/6/897/6/11

    ASJC Scopus subject areas

    • Engineering(all)

    Fingerprint Dive into the research topics of 'Three-dimensional masterslice MMIC on Si substrate'. Together they form a unique fingerprint.

  • Cite this

    Toyoda, I., Nishikawa, K., Tokumitsu, T., Kamogawa, K., Yamaguchi, C., Hirano, M., & Aikawa, M. (1997). Three-dimensional masterslice MMIC on Si substrate. 113-116. Paper presented at Proceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Denver, CO, USA, .