Three-dimensional micro modification and selective etching of crystalline silicon using 1.56-μm subpicosecond laser pulses

Shigeki Matsuo, Keiji Oda, Yoshiki Naoi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three dimensional micro removal processing was attempted to crystalline silicon substrate using a 1.56-μm subpicosecond laser. Selective removal was observed on both top and rear surfaces when nitric hydrofluoric acid was used as etchant.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs
Publication statusPublished - 2013 Oct 18
Event10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
Duration: 2013 Jun 302013 Jul 4

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
CountryJapan
CityKyoto
Period13/6/3013/7/4

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Matsuo, S., Oda, K., & Naoi, Y. (2013). Three-dimensional micro modification and selective etching of crystalline silicon using 1.56-μm subpicosecond laser pulses. In 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 [6600555] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600555