Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors

Koh Inoue; Kenji Kamogawa; Kenjiro Nishikawa; Kenji Ikuta; Kiyomitsu Onodera; Makoto Hirano

doi:10.1109/EUMA.1998.338062

Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors

Koh Inoue, Kenji Kamogawa, Kenjiro Nishikawa, Kenji Ikuta, Kiyomitsu Onodera, Makoto Hirano

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

Original language	English
Pages	642-647
Number of pages	6
DOIs	https://doi.org/10.1109/EUMA.1998.338062
Publication status	Published - 1998 Jan 1
Event	1998 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands Duration: 1998 Oct 5 → 1998 Oct 9

Conference

Conference	1998 28th European Microwave Conference, EuMC 1998
Country	Netherlands
City	Amsterdam
Period	98/10/5 → 98/10/9

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EUMA.1998.338062

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AU - Inoue, Koh

AU - Kamogawa, Kenji

AU - Nishikawa, Kenjiro

AU - Ikuta, Kenji

AU - Onodera, Kiyomitsu

AU - Hirano, Makoto

PY - 1998/1/1

Y1 - 1998/1/1

N2 - This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

AB - This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

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T2 - 1998 28th European Microwave Conference, EuMC 1998

Y2 - 5 October 1998 through 9 October 1998

ER -

Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors

Abstract

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ASJC Scopus subject areas

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