Abstract
This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.
| Original language | English |
|---|---|
| Pages | 642-647 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
| Event | 1998 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands Duration: 1998 Oct 5 → 1998 Oct 9 |
Conference
| Conference | 1998 28th European Microwave Conference, EuMC 1998 |
|---|---|
| Country | Netherlands |
| City | Amsterdam |
| Period | 98/10/5 → 98/10/9 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Hardware and Architecture
- Electrical and Electronic Engineering
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Cite this
Inoue, K., Kamogawa, K., Nishikawa, K., Ikuta, K., Onodera, K., & Hirano, M. (1998). Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors. 642-647. Paper presented at 1998 28th European Microwave Conference, EuMC 1998, Amsterdam, Netherlands. https://doi.org/10.1109/EUMA.1998.338062