Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors

Koh Inoue, Kenji Kamogawa, Kenjiro Nishikawa, Kenji Ikuta, Kiyomitsu Onodera, Makoto Hirano

    Research output: Contribution to conferencePaper

    5 Citations (Scopus)

    Abstract

    This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

    Original languageEnglish
    Pages642-647
    Number of pages6
    DOIs
    Publication statusPublished - 1998 Jan 1
    Event1998 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands
    Duration: 1998 Oct 51998 Oct 9

    Conference

    Conference1998 28th European Microwave Conference, EuMC 1998
    CountryNetherlands
    CityAmsterdam
    Period98/10/598/10/9

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Hardware and Architecture
    • Electrical and Electronic Engineering

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  • Cite this

    Inoue, K., Kamogawa, K., Nishikawa, K., Ikuta, K., Onodera, K., & Hirano, M. (1998). Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors. 642-647. Paper presented at 1998 28th European Microwave Conference, EuMC 1998, Amsterdam, Netherlands. https://doi.org/10.1109/EUMA.1998.338062