Abstract
This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.
| Original language | English |
|---|---|
| Title of host publication | 1998 28th European Microwave Conference, EuMC 1998 |
| Publisher | IEEE Computer Society |
| Pages | 642-647 |
| Number of pages | 6 |
| Volume | 1 |
| DOIs | |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | 1998 28th European Microwave Conference, EuMC 1998 - Amsterdam Duration: 1998 Oct 5 → 1998 Oct 9 |
Other
| Other | 1998 28th European Microwave Conference, EuMC 1998 |
|---|---|
| City | Amsterdam |
| Period | 98/10/5 → 98/10/9 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors. / Inoue, Koh; Kamogawa, Kenji; Nishikawa, Kenjiro; Ikuta, Kenji; Onodera, Kiyomitsu; Hirano, Makoto.
1998 28th European Microwave Conference, EuMC 1998. Vol. 1 IEEE Computer Society, 1998. p. 642-647 4139149.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors
AU - Inoue, Koh
AU - Kamogawa, Kenji
AU - Nishikawa, Kenjiro
AU - Ikuta, Kenji
AU - Onodera, Kiyomitsu
AU - Hirano, Makoto
PY - 1998
Y1 - 1998
N2 - This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.
AB - This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.
UR - http://www.scopus.com/inward/record.url?scp=84897546363&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84897546363&partnerID=8YFLogxK
U2 - 10.1109/EUMA.1998.338062
DO - 10.1109/EUMA.1998.338062
M3 - Conference contribution
VL - 1
SP - 642
EP - 647
BT - 1998 28th European Microwave Conference, EuMC 1998
PB - IEEE Computer Society
ER -