Three-dimensional passive circuit technology for ultra-compact MMIC's

Makoto Hirano, Kenjiro Nishikawa, Ichihiko Toyoda, Shinji Aoyama, Suehiro Sugitani, Kimiyoshi Yamasaki

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

A novel passive circuit technology of a three-dimensional (3-D) metal-insulator structure is developed for ultra-compact MMIC's. By combining vertical passive elements, such as a wall-like microwire for shielding or coupling, and a pillar-like via connection with multilayer passive circuits, a 3-D passive circuit structure is formed to implement highly dense and more functional MMIC's. O2/He RIE for forming trenches and holes in a thick polyimide insulator, low-current electroplating for foming gold metal sidewalls in the trenches or holes, and ion-milling with a WSiN stopper layer for patterning the gold metal are used to produce such a structure. The complete 3-D structure provides miniature microstrip lines effectively shielded with a vertical metal-wall, a miniature balun with low-loss vertical wall-like microwires, and inverted microstrip lines jointed with pillar-like vias through a thick polyimide layer. This technology stages next-generation ultra-compact MMIC's by producing various functional passive circuits in a very small area.

Original languageEnglish
Pages (from-to)2845-2850
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume43
Issue number12 pt 2
DOIs
Publication statusPublished - 1995 Dec
Externally publishedYes

Fingerprint

Passive networks
Monolithic microwave integrated circuits
Microstrip lines
Metals
polyimides
Polyimides
metals
Gold
insulators
gold
Reactive ion etching
electroplating
Electroplating
low currents
Shielding
shielding
Multilayers
Ions
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hirano, M., Nishikawa, K., Toyoda, I., Aoyama, S., Sugitani, S., & Yamasaki, K. (1995). Three-dimensional passive circuit technology for ultra-compact MMIC's. IEEE Transactions on Microwave Theory and Techniques, 43(12 pt 2), 2845-2850. https://doi.org/10.1109/22.475644

Three-dimensional passive circuit technology for ultra-compact MMIC's. / Hirano, Makoto; Nishikawa, Kenjiro; Toyoda, Ichihiko; Aoyama, Shinji; Sugitani, Suehiro; Yamasaki, Kimiyoshi.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 43, No. 12 pt 2, 12.1995, p. 2845-2850.

Research output: Contribution to journalArticle

Hirano, M, Nishikawa, K, Toyoda, I, Aoyama, S, Sugitani, S & Yamasaki, K 1995, 'Three-dimensional passive circuit technology for ultra-compact MMIC's', IEEE Transactions on Microwave Theory and Techniques, vol. 43, no. 12 pt 2, pp. 2845-2850. https://doi.org/10.1109/22.475644
Hirano M, Nishikawa K, Toyoda I, Aoyama S, Sugitani S, Yamasaki K. Three-dimensional passive circuit technology for ultra-compact MMIC's. IEEE Transactions on Microwave Theory and Techniques. 1995 Dec;43(12 pt 2):2845-2850. https://doi.org/10.1109/22.475644
Hirano, Makoto ; Nishikawa, Kenjiro ; Toyoda, Ichihiko ; Aoyama, Shinji ; Sugitani, Suehiro ; Yamasaki, Kimiyoshi. / Three-dimensional passive circuit technology for ultra-compact MMIC's. In: IEEE Transactions on Microwave Theory and Techniques. 1995 ; Vol. 43, No. 12 pt 2. pp. 2845-2850.
@article{95d0f889fde94f81b26582d155d4dd0d,
title = "Three-dimensional passive circuit technology for ultra-compact MMIC's",
abstract = "A novel passive circuit technology of a three-dimensional (3-D) metal-insulator structure is developed for ultra-compact MMIC's. By combining vertical passive elements, such as a wall-like microwire for shielding or coupling, and a pillar-like via connection with multilayer passive circuits, a 3-D passive circuit structure is formed to implement highly dense and more functional MMIC's. O2/He RIE for forming trenches and holes in a thick polyimide insulator, low-current electroplating for foming gold metal sidewalls in the trenches or holes, and ion-milling with a WSiN stopper layer for patterning the gold metal are used to produce such a structure. The complete 3-D structure provides miniature microstrip lines effectively shielded with a vertical metal-wall, a miniature balun with low-loss vertical wall-like microwires, and inverted microstrip lines jointed with pillar-like vias through a thick polyimide layer. This technology stages next-generation ultra-compact MMIC's by producing various functional passive circuits in a very small area.",
author = "Makoto Hirano and Kenjiro Nishikawa and Ichihiko Toyoda and Shinji Aoyama and Suehiro Sugitani and Kimiyoshi Yamasaki",
year = "1995",
month = "12",
doi = "10.1109/22.475644",
language = "English",
volume = "43",
pages = "2845--2850",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12 pt 2",

}

TY - JOUR

T1 - Three-dimensional passive circuit technology for ultra-compact MMIC's

AU - Hirano, Makoto

AU - Nishikawa, Kenjiro

AU - Toyoda, Ichihiko

AU - Aoyama, Shinji

AU - Sugitani, Suehiro

AU - Yamasaki, Kimiyoshi

PY - 1995/12

Y1 - 1995/12

N2 - A novel passive circuit technology of a three-dimensional (3-D) metal-insulator structure is developed for ultra-compact MMIC's. By combining vertical passive elements, such as a wall-like microwire for shielding or coupling, and a pillar-like via connection with multilayer passive circuits, a 3-D passive circuit structure is formed to implement highly dense and more functional MMIC's. O2/He RIE for forming trenches and holes in a thick polyimide insulator, low-current electroplating for foming gold metal sidewalls in the trenches or holes, and ion-milling with a WSiN stopper layer for patterning the gold metal are used to produce such a structure. The complete 3-D structure provides miniature microstrip lines effectively shielded with a vertical metal-wall, a miniature balun with low-loss vertical wall-like microwires, and inverted microstrip lines jointed with pillar-like vias through a thick polyimide layer. This technology stages next-generation ultra-compact MMIC's by producing various functional passive circuits in a very small area.

AB - A novel passive circuit technology of a three-dimensional (3-D) metal-insulator structure is developed for ultra-compact MMIC's. By combining vertical passive elements, such as a wall-like microwire for shielding or coupling, and a pillar-like via connection with multilayer passive circuits, a 3-D passive circuit structure is formed to implement highly dense and more functional MMIC's. O2/He RIE for forming trenches and holes in a thick polyimide insulator, low-current electroplating for foming gold metal sidewalls in the trenches or holes, and ion-milling with a WSiN stopper layer for patterning the gold metal are used to produce such a structure. The complete 3-D structure provides miniature microstrip lines effectively shielded with a vertical metal-wall, a miniature balun with low-loss vertical wall-like microwires, and inverted microstrip lines jointed with pillar-like vias through a thick polyimide layer. This technology stages next-generation ultra-compact MMIC's by producing various functional passive circuits in a very small area.

UR - http://www.scopus.com/inward/record.url?scp=0029509348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029509348&partnerID=8YFLogxK

U2 - 10.1109/22.475644

DO - 10.1109/22.475644

M3 - Article

VL - 43

SP - 2845

EP - 2850

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 12 pt 2

ER -