Three-dimensional residue-free volume removal inside sapphire by high-temperature etching after irradiation of femtosecond laser Pulses

Shigeki Matsuo, Kensuke Tokumi, Takuro Tomita, Shuichi Hashimoto

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.

Original languageEnglish
Article number892721
JournalLaser Chemistry
Volume2008
DOIs
Publication statusPublished - 2008
Externally publishedYes

Fingerprint

Aluminum Oxide
Free volume
Ultrashort pulses
Etching
sapphire
etching
Irradiation
irradiation
pulses
lasers
Temperature
cracks
Cracks
room temperature
Processing

ASJC Scopus subject areas

  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Biochemistry

Cite this

Three-dimensional residue-free volume removal inside sapphire by high-temperature etching after irradiation of femtosecond laser Pulses. / Matsuo, Shigeki; Tokumi, Kensuke; Tomita, Takuro; Hashimoto, Shuichi.

In: Laser Chemistry, Vol. 2008, 892721, 2008.

Research output: Contribution to journalArticle

@article{56f36b94091f43dd981596ffd3fac6c9,
title = "Three-dimensional residue-free volume removal inside sapphire by high-temperature etching after irradiation of femtosecond laser Pulses",
abstract = "We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.",
author = "Shigeki Matsuo and Kensuke Tokumi and Takuro Tomita and Shuichi Hashimoto",
year = "2008",
doi = "10.1155/2008/892721",
language = "English",
volume = "2008",
journal = "Laser Chemistry",
issn = "0278-6273",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - Three-dimensional residue-free volume removal inside sapphire by high-temperature etching after irradiation of femtosecond laser Pulses

AU - Matsuo, Shigeki

AU - Tokumi, Kensuke

AU - Tomita, Takuro

AU - Hashimoto, Shuichi

PY - 2008

Y1 - 2008

N2 - We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.

AB - We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.

UR - http://www.scopus.com/inward/record.url?scp=54549102221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54549102221&partnerID=8YFLogxK

U2 - 10.1155/2008/892721

DO - 10.1155/2008/892721

M3 - Article

VL - 2008

JO - Laser Chemistry

JF - Laser Chemistry

SN - 0278-6273

M1 - 892721

ER -