Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy

Yijun Sun, Masayuki Yamamori, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effects of growth temperature on nitrogen incorporation in GaNAs grown by chemical beam epitaxy are studied from 340 to 515°C. Generally speaking, with increasing growth temperature, nitrogen content decreases. However, three distinct growth-temperature-dependent regions for nitrogen incorporation with activation energies of 0.59, 0.05, and 0.95 eV can be identified at low, middle, and high growth temperatures, respectively. At low and high growth temperatures, the growth temperature dependences of nitrogen incorporation are due to triethylgallium (TEG)-pyrolysis- and nitrogen-desorption-controlled processes, respectively, while a TEG-transportation-limited process is observed at middle temperatures. Atomic force microscope (AFM) results also show that there are three different surface morphologies for GaNAs grown at different growth temperatures. Based on X-ray diffraction (XRD) and AFM results, the best growth mechanism is determined, and high quality GaN0.007As 0.993/GaAs triple quantum wells are obtained.

Original languageEnglish
Pages (from-to)2409-2413
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number5 A
Publication statusPublished - 2004 May
Externally publishedYes

Fingerprint

Chemical beam epitaxy
Growth temperature
epitaxy
Nitrogen
nitrogen
temperature
Microscopes
microscopes
Semiconductor quantum wells
Surface morphology
Desorption
Pyrolysis
pyrolysis
Activation energy
desorption
X ray diffraction
quantum wells
activation energy
temperature dependence

Keywords

  • Chemical beam epitaxy
  • GaNAs
  • Growth mechanism
  • Nitrogen incorporation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy. / Sun, Yijun; Yamamori, Masayuki; Egawa, Takashi; Ishikawa, Hiroyasu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 5 A, 05.2004, p. 2409-2413.

Research output: Contribution to journalArticle

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