Threshold-Voltage Stability of P-Channel AlGaAs/GaAs MIS-Like Heterostructure FETs

Makoto Hirano

    Research output: Contribution to journalArticle

    1 Citation (Scopus)
    Original languageEnglish
    Pages (from-to)L554-L556
    JournalJapanese Journal of Applied Physics
    Volume25
    Publication statusPublished - 1986 Jul 1

    Cite this

    Threshold-Voltage Stability of P-Channel AlGaAs/GaAs MIS-Like Heterostructure FETs. / Hirano, Makoto.

    In: Japanese Journal of Applied Physics, Vol. 25, 01.07.1986, p. L554-L556.

    Research output: Contribution to journalArticle

    @article{f249a59c614442d5aa3dc0ea617ae950,
    title = "Threshold-Voltage Stability of P-Channel AlGaAs/GaAs MIS-Like Heterostructure FETs",
    author = "Makoto Hirano",
    year = "1986",
    month = "7",
    day = "1",
    language = "English",
    volume = "25",
    pages = "L554--L556",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",

    }

    TY - JOUR

    T1 - Threshold-Voltage Stability of P-Channel AlGaAs/GaAs MIS-Like Heterostructure FETs

    AU - Hirano, Makoto

    PY - 1986/7/1

    Y1 - 1986/7/1

    M3 - Article

    VL - 25

    SP - L554-L556

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    ER -