Time-dependent dielectric breakdown characterization of 90- and 65-nm-Node Cu/SiOC interconnects with via plugs

Kazuyoshi Ueno, Akiko Kameyama, Akira Matsumoto, Manabu Iguchi, Toshiyuki Takewaki, Daisuke Oshida, Hironori Toyoshima, Naoyoshi Kawahara, Susumu Asada, Mieko Suzuki, Noriaki Oda

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