Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs

Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)143-146
JournalProceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA
Publication statusPublished - 2003 May 1

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