Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs

Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)143-146
JournalProceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA
Publication statusPublished - 2003 May 1

Cite this

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title = "Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs",
author = "Y. Mitani and D. Kasai and K. Horio",
year = "2003",
month = "5",
day = "1",
language = "English",
pages = "143--146",
journal = "Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA",

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TY - JOUR

T1 - Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs

AU - Mitani, Y.

AU - Kasai, D.

AU - Horio, K.

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Y1 - 2003/5/1

M3 - Article

SP - 143

EP - 146

JO - Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA

JF - Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA

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