Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels

Y.Fuseya Y.Fuseya, K.Horio K.Horio, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)66-67
JournalTechnical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan
Publication statusPublished - 1991 May 1

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