Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels

Y.Fuseya Y.Fuseya, K.Horio K.Horio, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)66-67
JournalTechnical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan
Publication statusPublished - 1991 May 1

Cite this

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title = "Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels",
author = "Y.Fuseya Y.Fuseya and K.Horio K.Horio and Kazushige Horio",
year = "1991",
month = "5",
day = "1",
language = "English",
pages = "66--67",
journal = "Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan",

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AU - Y.Fuseya, Y.Fuseya

AU - K.Horio, K.Horio

AU - Horio, Kazushige

PY - 1991/5/1

Y1 - 1991/5/1

M3 - Article

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EP - 67

JO - Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan

JF - Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan

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