Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

K. Horio, N. Kurosawa

Research output: Contribution to journalArticle

Abstract

Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.

Original languageEnglish
Pages (from-to)1436-1437
Number of pages2
JournalElectronics Letters
Volume34
Issue number14
Publication statusPublished - 1998 Jul 9

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Heterojunction bipolar transistors
Cutoff frequency
Electrodes
Degradation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs. / Horio, K.; Kurosawa, N.

In: Electronics Letters, Vol. 34, No. 14, 09.07.1998, p. 1436-1437.

Research output: Contribution to journalArticle

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