Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi-insulating (SI) substrate. For a higher acceptor-density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p-buffer layer are also studied in terms of dependencies on p-layer thickness and its doping density.
|Number of pages||8|
|Journal||International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering|
|Publication status||Published - 1993 Jul|
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