Effects of surface states on turn-on characteristics of recessed-gate GaAs MESFETs are studied by two-dimensional simulation. It is found that the recess depth dr is deep and the distance between the gate and the recess edge Lr is set to be very narrow, the gate-lag (slow current transient) extinguishes for a case with surface states considered on horizontal planes only. However, in a realistic case with surface states included on both horizontal and vertical planes, the gate-lag is not eliminated even if dr is made rather deep. This is attributed to the fact that when the deep-acceptor-like surface state acts as a hole trap, the thickness of surface depletion layer can change much by the applied gate bias. To eliminate the gate-lag, the deep acceptor should be made electron-trap type. This can be realized by reducing the surface state density.
|Number of pages||6|
|Publication status||Published - 1997 Dec 1|
|Event||Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, UK|
Duration: 1997 Nov 24 → 1997 Nov 25
|Other||Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO|
|Period||97/11/24 → 97/11/25|
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