Abstract
Effects of surface states on turn-on characteristics of recessed-gate GaAs MESFETs are studied by two-dimensional simulation. It is found that the recess depth dr is deep and the distance between the gate and the recess edge Lr is set to be very narrow, the gate-lag (slow current transient) extinguishes for a case with surface states considered on horizontal planes only. However, in a realistic case with surface states included on both horizontal and vertical planes, the gate-lag is not eliminated even if dr is made rather deep. This is attributed to the fact that when the deep-acceptor-like surface state acts as a hole trap, the thickness of surface depletion layer can change much by the applied gate bias. To eliminate the gate-lag, the deep acceptor should be made electron-trap type. This can be realized by reducing the surface state density.
| Original language | English |
|---|---|
| Title of host publication | Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO |
| Editors | Anon |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 7-12 |
| Number of pages | 6 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, UK Duration: 1997 Nov 24 → 1997 Nov 25 |
Other
| Other | Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO |
|---|---|
| City | London, UK |
| Period | 97/11/24 → 97/11/25 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Two-dimensional analysis of gate-lag phenomena in recessed-gate GaAs MESFETs. / Horio, Kazushige; Yamada, T.
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. ed. / Anon. Piscataway, NJ, United States : IEEE, 1997. p. 7-12.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Two-dimensional analysis of gate-lag phenomena in recessed-gate GaAs MESFETs
AU - Horio, Kazushige
AU - Yamada, T.
PY - 1997
Y1 - 1997
N2 - Effects of surface states on turn-on characteristics of recessed-gate GaAs MESFETs are studied by two-dimensional simulation. It is found that the recess depth dr is deep and the distance between the gate and the recess edge Lr is set to be very narrow, the gate-lag (slow current transient) extinguishes for a case with surface states considered on horizontal planes only. However, in a realistic case with surface states included on both horizontal and vertical planes, the gate-lag is not eliminated even if dr is made rather deep. This is attributed to the fact that when the deep-acceptor-like surface state acts as a hole trap, the thickness of surface depletion layer can change much by the applied gate bias. To eliminate the gate-lag, the deep acceptor should be made electron-trap type. This can be realized by reducing the surface state density.
AB - Effects of surface states on turn-on characteristics of recessed-gate GaAs MESFETs are studied by two-dimensional simulation. It is found that the recess depth dr is deep and the distance between the gate and the recess edge Lr is set to be very narrow, the gate-lag (slow current transient) extinguishes for a case with surface states considered on horizontal planes only. However, in a realistic case with surface states included on both horizontal and vertical planes, the gate-lag is not eliminated even if dr is made rather deep. This is attributed to the fact that when the deep-acceptor-like surface state acts as a hole trap, the thickness of surface depletion layer can change much by the applied gate bias. To eliminate the gate-lag, the deep acceptor should be made electron-trap type. This can be realized by reducing the surface state density.
UR - http://www.scopus.com/inward/record.url?scp=0031358270&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031358270&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031358270
SP - 7
EP - 12
BT - Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
A2 - Anon, null
PB - IEEE
CY - Piscataway, NJ, United States
ER -