Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer

K.Horio K.Horio, H.Takayanagi H.Takayanagi, H.Nakano H.Nakano, K.Yonemoto K.Yonemoto, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1-9
JournalShibaura Institute of Technology
Volume50
Publication statusPublished - 2006 Sep 30

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K.Horio, K. H., H.Takayanagi, H. T., H.Nakano, H. N., K.Yonemoto, K. Y., & Horio, K. (2006). Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer. Shibaura Institute of Technology, 50, 1-9.