Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer

K.Horio K.Horio, H.Takayanagi H.Takayanagi, H.Nakano H.Nakano, K.Yonemoto K.Yonemoto, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1-9
JournalShibaura Institute of Technology
Volume50
Publication statusPublished - 2006 Sep 30

Cite this

Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer. / K.Horio, K.Horio; H.Takayanagi, H.Takayanagi; H.Nakano, H.Nakano; K.Yonemoto, K.Yonemoto; Horio, Kazushige.

In: Shibaura Institute of Technology, Vol. 50, 30.09.2006, p. 1-9.

Research output: Contribution to journalArticle

K.Horio, K.Horio ; H.Takayanagi, H.Takayanagi ; H.Nakano, H.Nakano ; K.Yonemoto, K.Yonemoto ; Horio, Kazushige. / Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer. In: Shibaura Institute of Technology. 2006 ; Vol. 50. pp. 1-9.
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