Abstract
Two-dimensional simulations of GaAs MESFET's are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage (`kink') arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET's.
| Original language | English |
|---|---|
| Pages (from-to) | 2256-2261 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 41 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1994 Dec |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's. / Horio, Kazushige; Satoh, Katsuhiko.
In: IEEE Transactions on Electron Devices, Vol. 41, No. 12, 12.1994, p. 2256-2261.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's
AU - Horio, Kazushige
AU - Satoh, Katsuhiko
PY - 1994/12
Y1 - 1994/12
N2 - Two-dimensional simulations of GaAs MESFET's are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage (`kink') arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET's.
AB - Two-dimensional simulations of GaAs MESFET's are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage (`kink') arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET's.
UR - http://www.scopus.com/inward/record.url?scp=0028740287&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028740287&partnerID=8YFLogxK
U2 - 10.1109/16.337436
DO - 10.1109/16.337436
M3 - Article
AN - SCOPUS:0028740287
VL - 41
SP - 2256
EP - 2261
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
ER -