Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's

Kazushige Horio, Katsuhiko Satoh

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Two-dimensional simulations of GaAs MESFET's are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage (`kink') arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET's.

Original languageEnglish
Pages (from-to)2256-2261
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume41
Issue number12
DOIs
Publication statusPublished - 1994 Dec

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dimensional analysis
field effect transistors
Substrates
Impact ionization
ionization
Drain current
Charge distribution
Electric space charge
charge distribution
gallium arsenide
space charge
breakdown
trapping
Modulation
Impurities
modulation
impurities
conductivity
output
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's. / Horio, Kazushige; Satoh, Katsuhiko.

In: IEEE Transactions on Electron Devices, Vol. 41, No. 12, 12.1994, p. 2256-2261.

Research output: Contribution to journalArticle

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