Two-Dimensional Analysis of Substrate-Related Kink Phenomena in GaAs MESFET’s

Kazushige Horio

doi:10.1109/16.337436

Two-Dimensional Analysis of Substrate-Related Kink Phenomena in GaAs MESFET’s

Kazushige Horio

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Two-dimensional simulations of GaAs MESFET’s are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage ("kink") arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET’s.

Original language	English
Pages (from-to)	2256-2261
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	41
Issue number	12
DOIs	https://doi.org/10.1109/16.337436
Publication status	Published - 1994 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.337436

Cite this

@article{569114a5deb04f2c814e9f3b8276cded,

title = "Two-Dimensional Analysis of Substrate-Related Kink Phenomena in GaAs MESFET{\textquoteright}s",

abstract = "Two-dimensional simulations of GaAs MESFET{\textquoteright}s are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage ({"}kink{"}) arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET{\textquoteright}s.",

author = "Kazushige Horio",

note = "Funding Information: Manuscript received March 3, 1994; revised July 11, 1994. The review of this paper was arranged by Associate Editor J. Xu. This work was supported in part by the Special Research Fund at the Shibaura Institute of Technology and in part by the Murata Science Foundation. K. Horio is with the Faculty of Systems Engineering, Shibaura Institute of Technology, 307 Fukasaku, Omiya 330. Japan. K. Satoh is with the Casio Corporation, Tokyo. Japan. IEEE Log Number 9406 188.",

year = "1994",

month = dec,

doi = "10.1109/16.337436",

language = "English",

volume = "41",

pages = "2256--2261",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Two-Dimensional Analysis of Substrate-Related Kink Phenomena in GaAs MESFET’s

AU - Horio, Kazushige

N1 - Funding Information: Manuscript received March 3, 1994; revised July 11, 1994. The review of this paper was arranged by Associate Editor J. Xu. This work was supported in part by the Special Research Fund at the Shibaura Institute of Technology and in part by the Murata Science Foundation. K. Horio is with the Faculty of Systems Engineering, Shibaura Institute of Technology, 307 Fukasaku, Omiya 330. Japan. K. Satoh is with the Casio Corporation, Tokyo. Japan. IEEE Log Number 9406 188.

PY - 1994/12

Y1 - 1994/12

N2 - Two-dimensional simulations of GaAs MESFET’s are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage ("kink") arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET’s.

AB - Two-dimensional simulations of GaAs MESFET’s are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage ("kink") arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET’s.

UR - http://www.scopus.com/inward/record.url?scp=0028740287&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028740287&partnerID=8YFLogxK

U2 - 10.1109/16.337436

DO - 10.1109/16.337436

M3 - Article

AN - SCOPUS:0028740287

VL - 41

SP - 2256

EP - 2261

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -

Two-Dimensional Analysis of Substrate-Related Kink Phenomena in GaAs MESFET’s

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this