Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFET's

Kazushige Horio, Akira Wakabayashi, Tomiko Yamada

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Effects of substrate traps on turn-on characteristics of GaAs MESFET's are studied by two-dimensional (2-D) simulation. When the off-state gate voltage is much more negative than the threshold (pinch-off) voltage and the surface-state effects are small, abnormal current overshoot and subsequent slow transients are observed for the case with undoped semi-insulating substrate including an electron trap: EL2. Even if the surface-state effects are pronounced to show the large gate-lag, the drain current may show the overshoot-like behavior at relatively early periods. The case of Cr-doped substrate with a hole trap: Cr is also discussed.

Original languageEnglish
Pages (from-to)617-624
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume47
Issue number3
DOIs
Publication statusPublished - 2000

Fingerprint

dimensional analysis
field effect transistors
traps
Surface states
Substrates
Hole traps
Electron traps
Drain current
Electric potential
electric potential
time lag
thresholds
gallium arsenide
electrons
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFET's. / Horio, Kazushige; Wakabayashi, Akira; Yamada, Tomiko.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 3, 2000, p. 617-624.

Research output: Contribution to journalArticle

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