Abstract
Effects of substrate traps on turn-on characteristics of GaAs MESFET's are studied by two-dimensional (2-D) simulation. When the off-state gate voltage is much more negative than the threshold (pinch-off) voltage and the surface-state effects are small, abnormal current overshoot and subsequent slow transients are observed for the case with undoped semi-insulating substrate including an electron trap: EL2. Even if the surface-state effects are pronounced to show the large gate-lag, the drain current may show the overshoot-like behavior at relatively early periods. The case of Cr-doped substrate with a hole trap: Cr is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 617-624 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 47 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2000 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering