Original language | English |
---|---|
Pages (from-to) | 648-655 |
Journal | IEEE Trans. Electron Devices |
Volume | 46 |
Publication status | Published - 1999 Apr 1 |
Cite this
K.Horio, K. H., T.Yamada, T. Y., & Horio, K. (1999). Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s. IEEE Trans. Electron Devices, 46, 648-655.
Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s. / K.Horio, K.Horio; T.Yamada, T.Yamada; Horio, Kazushige.
In: IEEE Trans. Electron Devices, Vol. 46, 01.04.1999, p. 648-655.Research output: Contribution to journal › Article
K.Horio, KH, T.Yamada, TY & Horio, K 1999, 'Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s', IEEE Trans. Electron Devices, vol. 46, pp. 648-655.
K.Horio KH, T.Yamada TY, Horio K. Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s. IEEE Trans. Electron Devices. 1999 Apr 1;46:648-655.
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