| Original language | English |
|---|---|
| Pages (from-to) | 648-655 |
| Journal | IEEE Trans. Electron Devices |
| Volume | 46 |
| Publication status | Published - 1999 Apr 1 |
Cite this
K.Horio, K. H., T.Yamada, T. Y., & Horio, K. (1999). Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s. IEEE Trans. Electron Devices, 46, 648-655.
Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s. / K.Horio, K.Horio; T.Yamada, T.Yamada; Horio, Kazushige.
In: IEEE Trans. Electron Devices, Vol. 46, 01.04.1999, p. 648-655.Research output: Contribution to journal › Article
K.Horio, KH, T.Yamada, TY & Horio, K 1999, 'Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s', IEEE Trans. Electron Devices, vol. 46, pp. 648-655.
K.Horio KH, T.Yamada TY, Horio K. Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s. IEEE Trans. Electron Devices. 1999 Apr 1;46:648-655.
@article{d5f2906e3bb24990a801f458af9a7929,
title = "Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s",
author = "K.Horio K.Horio and T.Yamada T.Yamada and Kazushige Horio",
year = "1999",
month = "4",
day = "1",
language = "English",
volume = "46",
pages = "648--655",
journal = "IEEE Trans. Electron Devices",
}
TY - JOUR
T1 - Two-Dimensional Analysis of Surface-Sstate Effects on Turn-on Characteristics in GaAs MESFET`s
AU - K.Horio, K.Horio
AU - T.Yamada, T.Yamada
AU - Horio, Kazushige
PY - 1999/4/1
Y1 - 1999/4/1
M3 - Article
VL - 46
SP - 648
EP - 655
JO - IEEE Trans. Electron Devices
JF - IEEE Trans. Electron Devices
ER -