Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States

K.Horio K.Horio, K.Satoh K.Satoh, T.Yamada T.Yamada, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)78-81
JournalProceedings of SISDEP’95, Erlangen, Germany
Publication statusPublished - 1995 Sep 1

Cite this

Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States. / K.Horio, K.Horio; K.Satoh, K.Satoh; T.Yamada, T.Yamada; Horio, Kazushige.

In: Proceedings of SISDEP’95, Erlangen, Germany, 01.09.1995, p. 78-81.

Research output: Contribution to journalArticle

@article{e0df92e5f89b4a5c9cea4b02921fe636,
title = "Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States",
author = "K.Horio K.Horio and K.Satoh K.Satoh and T.Yamada T.Yamada and Kazushige Horio",
year = "1995",
month = "9",
day = "1",
language = "English",
pages = "78--81",
journal = "Proceedings of SISDEP’95, Erlangen, Germany",

}

TY - JOUR

T1 - Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States

AU - K.Horio, K.Horio

AU - K.Satoh, K.Satoh

AU - T.Yamada, T.Yamada

AU - Horio, Kazushige

PY - 1995/9/1

Y1 - 1995/9/1

M3 - Article

SP - 78

EP - 81

JO - Proceedings of SISDEP’95, Erlangen, Germany

JF - Proceedings of SISDEP’95, Erlangen, Germany

ER -