Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate

Kazushige Horio, Kazuhiro Asada, Hisayoshi Yanai

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Numerical simulations of GaAs MESFETs with deep chromium acceptors in the semi-insulating substrate were made. The results were compared with those obtained for a case with deep donors such as EL2 centers and shallow acceptors. It was found that an acceptor density in the substrate is a predominant factor in determining current-voltage characteristics of GaAs MESFETs, whether the acceptor is deep or shallow. Potential profiles were, however, found to depend strongly on the nature of deep levels in the substrate, suggesting that different drain breakdown characteristics or different backgating effects may be observed between the two cases. To minimize short-channel effects in GaAs MESFETs, the substrate conduction must be reduced. For this purpose, the deep-acceptor density in the semi-insulating substrate should be made high.

Original languageEnglish
Pages (from-to)335-343
Number of pages9
JournalSolid State Electronics
Volume34
Issue number4
DOIs
Publication statusPublished - 1991

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field effect transistors
Substrates
simulation
Chromium
Current voltage characteristics
chromium
breakdown
gallium arsenide
conduction
Computer simulation
electric potential
profiles

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate. / Horio, Kazushige; Asada, Kazuhiro; Yanai, Hisayoshi.

In: Solid State Electronics, Vol. 34, No. 4, 1991, p. 335-343.

Research output: Contribution to journalArticle

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