Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)339-342
JournalInstitute of Physics Conference Series
VolumeVol.166
Publication statusPublished - 2000 Apr 1

Cite this

K.Horio, K. H., A.Wakabayashi, A. W., N.Kurosawa, N. K., & Horio, K. (2000). Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS. Institute of Physics Conference Series, Vol.166, 339-342.