Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)339-342
JournalInstitute of Physics Conference Series
VolumeVol.166
Publication statusPublished - 2000 Apr 1

Cite this

Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS. / K.Horio, K.Horio; A.Wakabayashi, A.Wakabayashi; N.Kurosawa, N.Kurosawa; Horio, Kazushige.

In: Institute of Physics Conference Series, Vol. Vol.166, 01.04.2000, p. 339-342.

Research output: Contribution to journalArticle

K.Horio, K.Horio ; A.Wakabayashi, A.Wakabayashi ; N.Kurosawa, N.Kurosawa ; Horio, Kazushige. / Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS. In: Institute of Physics Conference Series. 2000 ; Vol. Vol.166. pp. 339-342.
@article{6702fc60762543628ec1b41962a30e1f,
title = "Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS",
author = "K.Horio K.Horio and A.Wakabayashi A.Wakabayashi and N.Kurosawa N.Kurosawa and Kazushige Horio",
year = "2000",
month = "4",
day = "1",
language = "English",
volume = "Vol.166",
pages = "339--342",
journal = "Institute of Physics Conference Series",

}

TY - JOUR

T1 - Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS

AU - K.Horio, K.Horio

AU - A.Wakabayashi, A.Wakabayashi

AU - N.Kurosawa, N.Kurosawa

AU - Horio, Kazushige

PY - 2000/4/1

Y1 - 2000/4/1

M3 - Article

VL - Vol.166

SP - 339

EP - 342

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

ER -