Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)339-342
JournalProceedings of ISCS'99, Berlin, Germany
Publication statusPublished - 1999 Aug 1

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K.Horio, K. H., A.Wakabayashi, A. W., N.Kurosawa, N. K., & Horio, K. (1999). Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs. Proceedings of ISCS'99, Berlin, Germany, 339-342.