Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)339-342
JournalProceedings of ISCS'99, Berlin, Germany
Publication statusPublished - 1999 Aug 1

Cite this

Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs. / K.Horio, K.Horio; A.Wakabayashi, A.Wakabayashi; N.Kurosawa, N.Kurosawa; Horio, Kazushige.

In: Proceedings of ISCS'99, Berlin, Germany, 01.08.1999, p. 339-342.

Research output: Contribution to journalArticle

K.Horio, K.Horio ; A.Wakabayashi, A.Wakabayashi ; N.Kurosawa, N.Kurosawa ; Horio, Kazushige. / Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs. In: Proceedings of ISCS'99, Berlin, Germany. 1999 ; pp. 339-342.
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