Abstract
2-D simulation of backgating effect in GaAs MESFET's is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. The mechanism is attributed to the change of EL2's nature by capturing holes which are generated by impact ionization and flow into the substrate.
| Original language | English |
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| Title of host publication | IEEE Region 10 Annual International Conference, Proceedings/TENCON |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 115-118 |
| Number of pages | 4 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong Duration: 1995 Nov 6 → 1995 Nov 10 |
Other
| Other | Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 |
|---|---|
| City | Hong Kong, Hong Kong |
| Period | 95/11/6 → 95/11/10 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Horio, K., & Usami, K. (1995). Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's. In IEEE Region 10 Annual International Conference, Proceedings/TENCON (pp. 115-118). Piscataway, NJ, United States: IEEE.