Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's

Kazushige Horio, Kazuoki Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

2-D simulation of backgating effect in GaAs MESFET's is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. The mechanism is attributed to the change of EL2's nature by capturing holes which are generated by impact ionization and flow into the substrate.

Original languageEnglish
Title of host publicationIEEE Region 10 Annual International Conference, Proceedings/TENCON
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages115-118
Number of pages4
Publication statusPublished - 1995
EventProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
Duration: 1995 Nov 61995 Nov 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
CityHong Kong, Hong Kong
Period95/11/695/11/10

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horio, K., & Usami, K. (1995). Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's. In IEEE Region 10 Annual International Conference, Proceedings/TENCON (pp. 115-118). Piscataway, NJ, United States: IEEE.