Abstract
2-D simulation of backgating effect in GaAs MESFET's is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. The mechanism is attributed to the change of EL2's nature by capturing holes which are generated by impact ionization and flow into the substrate.
| Original language | English |
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| Pages | 115-118 |
| Number of pages | 4 |
| Publication status | Published - 1995 Dec 1 |
| Event | Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong Duration: 1995 Nov 6 → 1995 Nov 10 |
Other
| Other | Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 |
|---|---|
| City | Hong Kong, Hong Kong |
| Period | 95/11/6 → 95/11/10 |
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering
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Horio, K., & Usami, K. (1995). Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's. 115-118. Paper presented at Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .