Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Y. Mitani, A. Wakabayashi, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

Original languageEnglish
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages580-583
Number of pages4
Publication statusPublished - 2002
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan
Duration: 2002 Apr 212002 Apr 25

Other

Other2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CitySan Juan
Period02/4/2102/4/25

Fingerprint

Surface states
Electric breakdown

Keywords

  • 2D simulation
  • Breakdown characteristics
  • GaAs MESFET
  • Recessed-gate structure
  • Surface state

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 (pp. 580-583)

Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. / Mitani, Y.; Wakabayashi, A.; Horio, Kazushige.

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. ed. / M. Laudon; B. Romanowicz. 2002. p. 580-583.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mitani, Y, Wakabayashi, A & Horio, K 2002, Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. in M Laudon & B Romanowicz (eds), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. pp. 580-583, 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002, San Juan, 02/4/21.
Mitani Y, Wakabayashi A, Horio K. Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. In Laudon M, Romanowicz B, editors, 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. 2002. p. 580-583
Mitani, Y. ; Wakabayashi, A. ; Horio, Kazushige. / Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. editor / M. Laudon ; B. Romanowicz. 2002. pp. 580-583
@inproceedings{155f56c7642049319a31a8c983e9b28b,
title = "Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs",
abstract = "Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.",
keywords = "2D simulation, Breakdown characteristics, GaAs MESFET, Recessed-gate structure, Surface state",
author = "Y. Mitani and A. Wakabayashi and Kazushige Horio",
year = "2002",
language = "English",
isbn = "0970827571",
pages = "580--583",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",

}

TY - GEN

T1 - Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

AU - Mitani, Y.

AU - Wakabayashi, A.

AU - Horio, Kazushige

PY - 2002

Y1 - 2002

N2 - Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

AB - Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

KW - 2D simulation

KW - Breakdown characteristics

KW - GaAs MESFET

KW - Recessed-gate structure

KW - Surface state

UR - http://www.scopus.com/inward/record.url?scp=6344244640&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344244640&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0970827571

SP - 580

EP - 583

BT - 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

A2 - Laudon, M.

A2 - Romanowicz, B.

ER -