Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Y. Mitani, A. Wakabayashi, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

Original languageEnglish
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages580-583
Number of pages4
Publication statusPublished - 2002 Dec 1
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
Duration: 2002 Apr 212002 Apr 25

Publication series

Name2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Conference

Conference2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CountryPuerto Rico
CitySan Juan
Period02/4/2102/4/25

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Keywords

  • 2D simulation
  • Breakdown characteristics
  • GaAs MESFET
  • Recessed-gate structure
  • Surface state

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 (pp. 580-583). (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).