Two-Dimensional Simulation of Surface-State Effects on Slow Current Transients in GaAs MESFETs

T.Yamada T.Yamada, K.Horio K.Horio, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)125-126
JournalProceedings of SISPAD’96, Tokyo, Japan
Publication statusPublished - 1996 Sep 1

Cite this

Two-Dimensional Simulation of Surface-State Effects on Slow Current Transients in GaAs MESFETs. / T.Yamada, T.Yamada; K.Horio, K.Horio; Horio, Kazushige.

In: Proceedings of SISPAD’96, Tokyo, Japan, 01.09.1996, p. 125-126.

Research output: Contribution to journalArticle

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