Two-dimensional simulations of cutoff frequency characteristics for algaas/gaas hbts with planar structures

K. Horio, A. Nakatani

Research output: Contribution to journalReview article

Abstract

Cutoff frequency Jr characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher fTin the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the fTcharacteristics provided that it is slightly away from the intrinsic collector region.

Original languageEnglish
Pages (from-to)331-340
Number of pages10
JournalCOMPEL - The international journal for computation and mathematics in electrical and electronic engineering
Volume12
Issue number4
DOIs
Publication statusPublished - 1993 Apr 1

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ASJC Scopus subject areas

  • Computer Science Applications
  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering
  • Applied Mathematics

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