Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures

Kazushige Horio, A. Nakatani

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Cutoff frequency fT characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher fT in the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the fT characteristics provided that it is slightly away from the intrinsic collector region.

Original languageEnglish
Title of host publicationCOMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
EditorsJohn J.H. Miller
Pages331-340
Number of pages10
Volume12
Edition4
Publication statusPublished - 1993 Dec
EventProceedings of the 9th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - Copper Mountain, CO, USA
Duration: 1993 Apr 61993 Apr 8

Other

OtherProceedings of the 9th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits
CityCopper Mountain, CO, USA
Period93/4/693/4/8

Fingerprint

Heterojunction bipolar transistors
Cutoff frequency

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Applied Mathematics

Cite this

Horio, K., & Nakatani, A. (1993). Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures. In J. J. H. Miller (Ed.), COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (4 ed., Vol. 12, pp. 331-340)

Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures. / Horio, Kazushige; Nakatani, A.

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. ed. / John J.H. Miller. Vol. 12 4. ed. 1993. p. 331-340.

Research output: Chapter in Book/Report/Conference proceedingChapter

Horio, K & Nakatani, A 1993, Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures. in JJH Miller (ed.), COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 4 edn, vol. 12, pp. 331-340, Proceedings of the 9th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, CO, USA, 93/4/6.
Horio K, Nakatani A. Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures. In Miller JJH, editor, COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 4 ed. Vol. 12. 1993. p. 331-340
Horio, Kazushige ; Nakatani, A. / Two-dimensional simulations of cutoff frequency characteristics for AlGaAs/GaAs HBTs with planar structures. COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. editor / John J.H. Miller. Vol. 12 4. ed. 1993. pp. 331-340
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