Original language | English |
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Pages (from-to) | 1340-1346 |
Journal | IEEE Trans. Electron Devices |
Volume | 41 |
Publication status | Published - 1994 Aug 1 |
Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels
K.Horio K.Horio, Y.Fuseya Y.Fuseya, Kazushige Horio
Research output: Contribution to journal › Article › peer-review
40
Citations
(Scopus)