Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, Kazushige Horio

Research output: Contribution to journalArticle

40 Citations (Scopus)
Original languageEnglish
Pages (from-to)1340-1346
JournalIEEE Trans. Electron Devices
Volume41
Publication statusPublished - 1994 Aug 1

Cite this