Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio; Y.Fuseya Y.Fuseya; Kazushige Horio

Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, Kazushige Horio

Electrical Engineering and Computer Science

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	1340-1346
Journal	IEEE Trans. Electron Devices
Volume	41
Publication status	Published - 1994 Aug 1

Cite this

K.Horio, K. H., Y.Fuseya, Y. F., & Horio, K. (1994). Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels. IEEE Trans. Electron Devices, 41, 1340-1346.

@article{b15c8030e8cc49c680af90450e6019e8,

title = "Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET{\textquoteright}s with Semi-insulating Substrates Compensated by Deep Levels",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and Kazushige Horio",

year = "1994",

month = aug,

day = "1",

language = "English",

volume = "41",

pages = "1340--1346",

journal = "IEEE Trans. Electron Devices",

}