| Original language | English |
|---|---|
| Pages (from-to) | 1340-1346 |
| Journal | IEEE Trans. Electron Devices |
| Volume | 41 |
| Publication status | Published - 1994 Aug 1 |
Cite this
K.Horio, K. H., Y.Fuseya, Y. F., & Horio, K. (1994). Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels. IEEE Trans. Electron Devices, 41, 1340-1346.
Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels. / K.Horio, K.Horio; Y.Fuseya, Y.Fuseya; Horio, Kazushige.
In: IEEE Trans. Electron Devices, Vol. 41, 01.08.1994, p. 1340-1346.Research output: Contribution to journal › Article
K.Horio, KH, Y.Fuseya, YF & Horio, K 1994, 'Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels', IEEE Trans. Electron Devices, vol. 41, pp. 1340-1346.
K.Horio KH, Y.Fuseya YF, Horio K. Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels. IEEE Trans. Electron Devices. 1994 Aug 1;41:1340-1346.
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