Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, Kazushige Horio

Research output: Contribution to journal › Article

@article{b15c8030e8cc49c680af90450e6019e8,

title = "Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and Kazushige Horio",

year = "1994",

month = "8",

day = "1",

language = "English",

volume = "41",

pages = "1340--1346",

journal = "IEEE Trans. Electron Devices",

}