Two-Dimensional Simulations of GaAs MESFETs Including Impact Ionization of Carriers and Carrier Trapping in the Semi-insulating Substrate

K. Horio, K. Satoh, H. Kusuki

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)100-101
JournalProceedings of 1993 VPAD, Nara, Japan
Publication statusPublished - 1993 May 1

Cite this

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title = "Two-Dimensional Simulations of GaAs MESFETs Including Impact Ionization of Carriers and Carrier Trapping in the Semi-insulating Substrate",
author = "K. Horio and K. Satoh and H. Kusuki",
year = "1993",
month = "5",
day = "1",
language = "English",
pages = "100--101",
journal = "Proceedings of 1993 VPAD, Nara, Japan",

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TY - JOUR

T1 - Two-Dimensional Simulations of GaAs MESFETs Including Impact Ionization of Carriers and Carrier Trapping in the Semi-insulating Substrate

AU - Horio, K.

AU - Satoh, K.

AU - Kusuki, H.

PY - 1993/5/1

Y1 - 1993/5/1

M3 - Article

SP - 100

EP - 101

JO - Proceedings of 1993 VPAD, Nara, Japan

JF - Proceedings of 1993 VPAD, Nara, Japan

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