Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

K. Horio, Y. Fuseya

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)410-413
JournalProceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France
Publication statusPublished - 1992 Sep 1

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