Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

K. Horio, Y. Fuseya

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)410-413
JournalProceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France
Publication statusPublished - 1992 Sep 1

Cite this

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title = "Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels",
author = "K. Horio and Y. Fuseya",
year = "1992",
month = "9",
day = "1",
language = "English",
pages = "410--413",
journal = "Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France",

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T1 - Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

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AU - Fuseya, Y.

PY - 1992/9/1

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M3 - Article

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EP - 413

JO - Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France

JF - Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France

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