Two-step forming process in planar-type Cu2O-based resistive switching devices

Kazunori Suzuki; Norihide Igarashi; Kentaro Kyuno

doi:10.1143/APEX.4.051801

Two-step forming process in planar-type Cu₂O-based resistive switching devices

Kazunori Suzuki, Norihide Igarashi, Kentaro Kyuno

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The forming process in planar-type Cu₂O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu₂O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.

Original language	English
Journal	Applied Physics Express
Volume	4
Issue number	5
DOIs	https://doi.org/10.1143/APEX.4.051801
Publication status	Published - 2011 May 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Two-step forming process in planar-type Cu2O-based resistive switching devices",

abstract = "The forming process in planar-type Cu2O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu2O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.",

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AU - Igarashi, Norihide

AU - Kyuno, Kentaro

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Y1 - 2011/5/1

N2 - The forming process in planar-type Cu2O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu2O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.

AB - The forming process in planar-type Cu2O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu2O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.

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Two-step forming process in planar-type Cu₂O-based resistive switching devices

Abstract

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