Two-step forming process in planar-type Cu2O-based resistive switching devices

Kazunori Suzuki; Norihide Igarashi; Kentaro Kyuno

doi:10.1143/APEX.4.051801

Two-step forming process in planar-type Cu₂O-based resistive switching devices

Kazunori Suzuki, Norihide Igarashi, Kentaro Kyuno

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The forming process in planar-type Cu₂O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu₂O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.

Original language	English
Journal	Applied Physics Express
Volume	4
Issue number	5
DOIs	https://doi.org/10.1143/APEX.4.051801
Publication status	Published - 2011 May 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/APEX.4.051801

Fingerprint Dive into the research topics of 'Two-step forming process in planar-type Cu<sub>2</sub>O-based resistive switching devices'. Together they form a unique fingerprint.

Cite this

@article{493c6992135b41ecaada49c078b51150,

title = "Two-step forming process in planar-type Cu2O-based resistive switching devices",

abstract = "The forming process in planar-type Cu2O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu2O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.",

author = "Kazunori Suzuki and Norihide Igarashi and Kentaro Kyuno",

year = "2011",

month = may,

day = "1",

doi = "10.1143/APEX.4.051801",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "5",

}

TY - JOUR

T1 - Two-step forming process in planar-type Cu2O-based resistive switching devices

AU - Suzuki, Kazunori

AU - Igarashi, Norihide

AU - Kyuno, Kentaro

PY - 2011/5/1

Y1 - 2011/5/1

N2 - The forming process in planar-type Cu2O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu2O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.

AB - The forming process in planar-type Cu2O-based resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu2O surface, and the filament is created ∼15 μm below the surface; the second process involves melting of the region between the electrodes with the creation of a new filament ∼1 μm below the surface.

UR - http://www.scopus.com/inward/record.url?scp=79956076515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956076515&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.051801

DO - 10.1143/APEX.4.051801

M3 - Article

AN - SCOPUS:79956076515

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 5