TY - JOUR
T1 - Two‐dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)
AU - Horio, Kazushige
PY - 1993/7
Y1 - 1993/7
N2 - Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi‐insulating (SI) substrate. For a higher acceptor density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p‐buffer layer are also studied in terms of dependencies on p‐layer thickness and its doping density. © 1993 John Wiley & Sons, Inc.
AB - Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi‐insulating (SI) substrate. For a higher acceptor density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p‐buffer layer are also studied in terms of dependencies on p‐layer thickness and its doping density. © 1993 John Wiley & Sons, Inc.
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U2 - 10.1002/mmce.4570030310
DO - 10.1002/mmce.4570030310
M3 - Article
AN - SCOPUS:0027626070
SN - 1096-4290
VL - 3
SP - 230
EP - 237
JO - International Journal of RF and Microwave Computer-Aided Engineering
JF - International Journal of RF and Microwave Computer-Aided Engineering
IS - 3
ER -