Ultra-high-speed GaAs MESFET IC modules using flip chip bonding

Hiroyuki Kikuchi, Hideki Tsunetsugu, Makoto Hirano, Satoshi Yamaguchi, Yuhki Imai

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    This paper describes a distributed amplifier IC module and a distributed 1: 2 signal distributor IC modulo for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0.1-/im-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1:2 signal distributor module was 40GHz and the loss was 2 dB. These modules were demonstrated at 40Gbit/s and clear eye openings were confirmed.

    Original languageEnglish
    Pages (from-to)475-482
    Number of pages8
    JournalIEICE Transactions on Electronics
    VolumeE82-C
    Issue number3
    Publication statusPublished - 1999 Jan 1

    Keywords

    • Amplifier
    • Distributor
    • Flip chip
    • Gaas mesfet
    • Microstrip line

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Kikuchi, H., Tsunetsugu, H., Hirano, M., Yamaguchi, S., & Imai, Y. (1999). Ultra-high-speed GaAs MESFET IC modules using flip chip bonding. IEICE Transactions on Electronics, E82-C(3), 475-482.