Ultra-high-speed GaAs MESFET IC modules using flip chip bonding

Hiroyuki Kikuchi, Hideki Tsunetsugu, Makoto Hirano, Satoshi Yamaguchi, Yuhki Imai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper describes a distributed amplifier IC module and a distributed 1: 2 signal distributor IC modulo for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0.1-/im-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1:2 signal distributor module was 40GHz and the loss was 2 dB. These modules were demonstrated at 40Gbit/s and clear eye openings were confirmed.

Original languageEnglish
Pages (from-to)475-482
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE82-C
Issue number3
Publication statusPublished - 1999
Externally publishedYes

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Keywords

  • Amplifier
  • Distributor
  • Flip chip
  • Gaas mesfet
  • Microstrip line

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kikuchi, H., Tsunetsugu, H., Hirano, M., Yamaguchi, S., & Imai, Y. (1999). Ultra-high-speed GaAs MESFET IC modules using flip chip bonding. IEICE Transactions on Electronics, E82-C(3), 475-482.