Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Masahiro Fujii; Tadashi Maeda; Yasuo Ohno; Masatoshi Tokushima; Masaoki Ishikawa; Muneo Fukaishi; Hikaru Hida

Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Masahiro Fujii, Tadashi Maeda, Yasuo Ohno, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida

Research output: Contribution to conference › Paper › peer-review

Abstract

SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.

Original language	English
Pages	51-54
Number of pages	4
Publication status	Published - 1994 Dec 1
Externally published	Yes
Event	Proceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA Duration: 1994 Oct 16 → 1994 Oct 19

Other

Other	Proceedingsof the 1994 IEEE GaAs IC Symposium
City	Philadelphia, PA, USA
Period	94/10/16 → 94/10/19

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. / Fujii, Masahiro; Maeda, Tadashi; Ohno, Yasuo; Tokushima, Masatoshi; Ishikawa, Masaoki; Fukaishi, Muneo; Hida, Hikaru.

1994. 51-54 Paper presented at Proceedingsof the 1994 IEEE GaAs IC Symposium, Philadelphia, PA, USA, .

Research output: Contribution to conference › Paper › peer-review

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title = "Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage",

abstract = "SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.",

author = "Masahiro Fujii and Tadashi Maeda and Yasuo Ohno and Masatoshi Tokushima and Masaoki Ishikawa and Muneo Fukaishi and Hikaru Hida",

year = "1994",

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AU - Fujii, Masahiro

AU - Maeda, Tadashi

AU - Ohno, Yasuo

AU - Tokushima, Masatoshi

AU - Ishikawa, Masaoki

AU - Fukaishi, Muneo

AU - Hida, Hikaru

PY - 1994/12/1

Y1 - 1994/12/1

N2 - SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.

AB - SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.

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T2 - Proceedingsof the 1994 IEEE GaAs IC Symposium

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Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Abstract

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ASJC Scopus subject areas

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