Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Masahiro Fujii, Tadashi Maeda, Yasuo Ohno, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.

Original languageEnglish
Pages51-54
Number of pages4
Publication statusPublished - 1994 Dec 1
EventProceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA
Duration: 1994 Oct 161994 Oct 19

Other

OtherProceedingsof the 1994 IEEE GaAs IC Symposium
CityPhiladelphia, PA, USA
Period94/10/1694/10/19

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M., & Hida, H. (1994). Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. 51-54. Paper presented at Proceedingsof the 1994 IEEE GaAs IC Symposium, Philadelphia, PA, USA, .