Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Masahiro Fujii, Tadashi Maeda, Yasuo Ohno, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherIEEE
Pages51-54
Number of pages4
Publication statusPublished - 1994
Externally publishedYes
EventProceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA
Duration: 1994 Oct 161994 Oct 19

Other

OtherProceedingsof the 1994 IEEE GaAs IC Symposium
CityPhiladelphia, PA, USA
Period94/10/1694/10/19

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Networks (circuits)
Electric potential
Electric power utilization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M., & Hida, H. (1994). Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 51-54). IEEE.

Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. / Fujii, Masahiro; Maeda, Tadashi; Ohno, Yasuo; Tokushima, Masatoshi; Ishikawa, Masaoki; Fukaishi, Muneo; Hida, Hikaru.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, 1994. p. 51-54.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujii, M, Maeda, T, Ohno, Y, Tokushima, M, Ishikawa, M, Fukaishi, M & Hida, H 1994, Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, pp. 51-54, Proceedingsof the 1994 IEEE GaAs IC Symposium, Philadelphia, PA, USA, 94/10/16.
Fujii M, Maeda T, Ohno Y, Tokushima M, Ishikawa M, Fukaishi M et al. Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE. 1994. p. 51-54
Fujii, Masahiro ; Maeda, Tadashi ; Ohno, Yasuo ; Tokushima, Masatoshi ; Ishikawa, Masaoki ; Fukaishi, Muneo ; Hida, Hikaru. / Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, 1994. pp. 51-54
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