Abstract
SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.
| Original language | English |
|---|---|
| Pages | 51-54 |
| Number of pages | 4 |
| Publication status | Published - 1994 Dec 1 |
| Event | Proceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA Duration: 1994 Oct 16 → 1994 Oct 19 |
Other
| Other | Proceedingsof the 1994 IEEE GaAs IC Symposium |
|---|---|
| City | Philadelphia, PA, USA |
| Period | 94/10/16 → 94/10/19 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M., & Hida, H. (1994). Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. 51-54. Paper presented at Proceedingsof the 1994 IEEE GaAs IC Symposium, Philadelphia, PA, USA, .