Abstract
SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
| Publisher | IEEE |
| Pages | 51-54 |
| Number of pages | 4 |
| Publication status | Published - 1994 |
| Externally published | Yes |
| Event | Proceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA Duration: 1994 Oct 16 → 1994 Oct 19 |
Other
| Other | Proceedingsof the 1994 IEEE GaAs IC Symposium |
|---|---|
| City | Philadelphia, PA, USA |
| Period | 94/10/16 → 94/10/19 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. / Fujii, Masahiro; Maeda, Tadashi; Ohno, Yasuo; Tokushima, Masatoshi; Ishikawa, Masaoki; Fukaishi, Muneo; Hida, Hikaru.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, 1994. p. 51-54.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage
AU - Fujii, Masahiro
AU - Maeda, Tadashi
AU - Ohno, Yasuo
AU - Tokushima, Masatoshi
AU - Ishikawa, Masaoki
AU - Fukaishi, Muneo
AU - Hida, Hikaru
PY - 1994
Y1 - 1994
N2 - SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.
AB - SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.
UR - http://www.scopus.com/inward/record.url?scp=0028728414&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028728414&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0028728414
SP - 51
EP - 54
BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PB - IEEE
ER -