Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning

Y.Tsuychiya Y.Tsuychiya; K.Ueno K.Ueno; V.M.Donnelly V.M.Donnelly; T.Kikkawa T.Kikkawa; Y.Hayashi Y.Hayashi; A.Kobayashi A.Kobayashi; A.Skiguchi A.Skiguchi; Kazuyoshi Ueno

Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning

Y.Tsuychiya Y.Tsuychiya, K.Ueno K.Ueno, V.M.Donnelly V.M.Donnelly, T.Kikkawa T.Kikkawa, Y.Hayashi Y.Hayashi, A.Kobayashi A.Kobayashi, A.Skiguchi A.Skiguchi, Kazuyoshi Ueno

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Original language	English
Pages (from-to)	59-60
Journal	1997 Symposium on VLSI Technology Digest of Technical Papers
Publication status	Published - 1997 Jun 1

Cite this

Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning. / Y.Tsuychiya, Y.Tsuychiya; K.Ueno, K.Ueno; V.M.Donnelly, V.M.Donnelly; T.Kikkawa, T.Kikkawa; Y.Hayashi, Y.Hayashi; A.Kobayashi, A.Kobayashi; A.Skiguchi, A.Skiguchi; Ueno, Kazuyoshi.

In: 1997 Symposium on VLSI Technology Digest of Technical Papers, 01.06.1997, p. 59-60.

Research output: Contribution to journal › Article › peer-review

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