Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning

Y.Tsuychiya Y.Tsuychiya, K.Ueno K.Ueno, V.M.Donnelly V.M.Donnelly, T.Kikkawa T.Kikkawa, Y.Hayashi Y.Hayashi, A.Kobayashi A.Kobayashi, A.Skiguchi A.Skiguchi, Kazuyoshi Ueno

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)59-60
Journal1997 Symposium on VLSI Technology Digest of Technical Papers
Publication statusPublished - 1997 Jun 1

Cite this

Y.Tsuychiya, Y. T., K.Ueno, K. U., V.M.Donnelly, V. M. D., T.Kikkawa, T. K., Y.Hayashi, Y. H., A.Kobayashi, A. K., A.Skiguchi, A. S., & Ueno, K. (1997). Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning. 1997 Symposium on VLSI Technology Digest of Technical Papers, 59-60.