Original language | English |
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Pages (from-to) | 59-60 |
Journal | 1997 Symposium on VLSI Technology Digest of Technical Papers |
Publication status | Published - 1997 Jun 1 |
Cite this
Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning. / Y.Tsuychiya, Y.Tsuychiya; K.Ueno, K.Ueno; V.M.Donnelly, V.M.Donnelly; T.Kikkawa, T.Kikkawa; Y.Hayashi, Y.Hayashi; A.Kobayashi, A.Kobayashi; A.Skiguchi, A.Skiguchi; Ueno, Kazuyoshi.
In: 1997 Symposium on VLSI Technology Digest of Technical Papers, 01.06.1997, p. 59-60.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning
AU - Y.Tsuychiya, Y.Tsuychiya
AU - K.Ueno, K.Ueno
AU - V.M.Donnelly, V.M.Donnelly
AU - T.Kikkawa, T.Kikkawa
AU - Y.Hayashi, Y.Hayashi
AU - A.Kobayashi, A.Kobayashi
AU - A.Skiguchi, A.Skiguchi
AU - Ueno, Kazuyoshi
PY - 1997/6/1
Y1 - 1997/6/1
M3 - Article
SP - 59
EP - 60
JO - 1997 Symposium on VLSI Technology Digest of Technical Papers
JF - 1997 Symposium on VLSI Technology Digest of Technical Papers
ER -