Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Shiro Kamohara; Nobuyuki Sugii; Yoshiki Yamamoto; Hideki Makiyama; Tomohiro Yamashita; Takumi Hasegawa; Shinobu Okanishi; Hiroshi Yanagita; Masaru Kadoshima; Keiichi Maekawa; Hitoshi Mitani; Yasushi Yamagata; Hidekazu Oda; Yasuo Yamaguchi; Koichiro Ishibashi; Hideharu Amano; Kimiyoshi Usami; Kazutoshi Kobayashi; Tomoko Mizutani; Toshiro Hiramoto

doi:10.1109/VLSIT.2014.6894413

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Shiro Kamohara, Nobuyuki Sugii, Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Masaru Kadoshima, Keiichi Maekawa, Hitoshi Mitani, Yasushi Yamagata, Hidekazu Oda, Yasuo Yamaguchi, Koichiro Ishibashi, Hideharu Amano, Kimiyoshi Usami, Kazutoshi Kobayashi, Tomoko Mizutani, Toshiro Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

Ultralow-voltage (ULV) operation of CMOS circuits is effective for significantly reducing the power consumption of the circuits. Although operation at the minimum energy point (MEP) is effective, its slow operating speed has been an obstacle. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for ultralow-power (ULP) electronics because of its small variability and back-bias control. These advantages of SOTB CMOS enable power and performance optimization with adaptive V_th control at ULV and can achieve ULP operation with acceptably high speed and low leakage. In this paper, we describe our recent results on the ULV operation of the CPU, SRAM, ring oscillator, and, other logic circuits. Our 32-bit RISC CPU chip, named 'Perpetuum Mobile,' has a record low energy consumption of 13.4 pJ when operating at 0.35 V and 14 MHz. Perpetuum-Mobile micro-controllers are expected to be a core building block in a huge number of electronic devices in the internet-of-things (IoT) era.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479933310
DOIs	https://doi.org/10.1109/VLSIT.2014.6894413
Publication status	Published - 2014 Sept 8
Event	34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States Duration: 2014 Jun 9 → 2014 Jun 12

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	34th Symposium on VLSI Technology, VLSIT 2014
Country/Territory	United States
City	Honolulu
Period	14/6/9 → 14/6/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2014.6894413

Cite this

Kamohara, S., Sugii, N., Yamamoto, Y., Makiyama, H., Yamashita, T., Hasegawa, T., Okanishi, S., Yanagita, H., Kadoshima, M., Maekawa, K., Mitani, H., Yamagata, Y., Oda, H., Yamaguchi, Y., Ishibashi, K., Amano, H., Usami, K., Kobayashi, K., Mizutani, T., & Hiramoto, T. (2014). Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. In Digest of Technical Papers - Symposium on VLSI Technology [6894413] (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894413

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. / Kamohara, Shiro; Sugii, Nobuyuki; Yamamoto, Yoshiki et al.

Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894413 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kamohara, S, Sugii, N, Yamamoto, Y, Makiyama, H, Yamashita, T, Hasegawa, T, Okanishi, S, Yanagita, H, Kadoshima, M, Maekawa, K, Mitani, H, Yamagata, Y, Oda, H, Yamaguchi, Y, Ishibashi, K, Amano, H, Usami, K, Kobayashi, K, Mizutani, T & Hiramoto, T 2014, Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. in Digest of Technical Papers - Symposium on VLSI Technology., 6894413, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 14/6/9. https://doi.org/10.1109/VLSIT.2014.6894413

Kamohara S, Sugii N, Yamamoto Y, Makiyama H, Yamashita T, Hasegawa T et al. Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894413. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2014.6894413

Kamohara, Shiro ; Sugii, Nobuyuki ; Yamamoto, Yoshiki et al. / Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. (Digest of Technical Papers - Symposium on VLSI Technology).

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abstract = "Ultralow-voltage (ULV) operation of CMOS circuits is effective for significantly reducing the power consumption of the circuits. Although operation at the minimum energy point (MEP) is effective, its slow operating speed has been an obstacle. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for ultralow-power (ULP) electronics because of its small variability and back-bias control. These advantages of SOTB CMOS enable power and performance optimization with adaptive Vth control at ULV and can achieve ULP operation with acceptably high speed and low leakage. In this paper, we describe our recent results on the ULV operation of the CPU, SRAM, ring oscillator, and, other logic circuits. Our 32-bit RISC CPU chip, named 'Perpetuum Mobile,' has a record low energy consumption of 13.4 pJ when operating at 0.35 V and 14 MHz. Perpetuum-Mobile micro-controllers are expected to be a core building block in a huge number of electronic devices in the internet-of-things (IoT) era.",

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N2 - Ultralow-voltage (ULV) operation of CMOS circuits is effective for significantly reducing the power consumption of the circuits. Although operation at the minimum energy point (MEP) is effective, its slow operating speed has been an obstacle. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for ultralow-power (ULP) electronics because of its small variability and back-bias control. These advantages of SOTB CMOS enable power and performance optimization with adaptive Vth control at ULV and can achieve ULP operation with acceptably high speed and low leakage. In this paper, we describe our recent results on the ULV operation of the CPU, SRAM, ring oscillator, and, other logic circuits. Our 32-bit RISC CPU chip, named 'Perpetuum Mobile,' has a record low energy consumption of 13.4 pJ when operating at 0.35 V and 14 MHz. Perpetuum-Mobile micro-controllers are expected to be a core building block in a huge number of electronic devices in the internet-of-things (IoT) era.

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Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Abstract

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ASJC Scopus subject areas

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