Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Shiro Kamohara, Nobuyuki Sugii, Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Masaru Kadoshima, Keiichi Maekawa, Hitoshi Mitani, Yasushi Yamagata, Hidekazu Oda, Yasuo Yamaguchi, Koichiro Ishibashi, Hideharu Amano, Kimiyoshi Usami, Kazutoshi Kobayashi, Tomoko Mizutani, Toshiro Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Ultralow-voltage (ULV) operation of CMOS circuits is effective for significantly reducing the power consumption of the circuits. Although operation at the minimum energy point (MEP) is effective, its slow operating speed has been an obstacle. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for ultralow-power (ULP) electronics because of its small variability and back-bias control. These advantages of SOTB CMOS enable power and performance optimization with adaptive Vth control at ULV and can achieve ULP operation with acceptably high speed and low leakage. In this paper, we describe our recent results on the ULV operation of the CPU, SRAM, ring oscillator, and, other logic circuits. Our 32-bit RISC CPU chip, named 'Perpetuum Mobile,' has a record low energy consumption of 13.4 pJ when operating at 0.35 V and 14 MHz. Perpetuum-Mobile micro-controllers are expected to be a core building block in a huge number of electronic devices in the internet-of-things (IoT) era.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479933310
DOIs
Publication statusPublished - 2014 Sep 8
Event34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu
Duration: 2014 Jun 92014 Jun 12

Other

Other34th Symposium on VLSI Technology, VLSIT 2014
CityHonolulu
Period14/6/914/6/12

Fingerprint

Electronic equipment
Silicon
Oxides
Program processors
Electric potential
Reduced instruction set computing
Networks (circuits)
Logic circuits
Static random access storage
Power electronics
Electric power utilization
Energy utilization
Controllers
Internet of things

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kamohara, S., Sugii, N., Yamamoto, Y., Makiyama, H., Yamashita, T., Hasegawa, T., ... Hiramoto, T. (2014). Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. In Digest of Technical Papers - Symposium on VLSI Technology [6894413] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894413

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. / Kamohara, Shiro; Sugii, Nobuyuki; Yamamoto, Yoshiki; Makiyama, Hideki; Yamashita, Tomohiro; Hasegawa, Takumi; Okanishi, Shinobu; Yanagita, Hiroshi; Kadoshima, Masaru; Maekawa, Keiichi; Mitani, Hitoshi; Yamagata, Yasushi; Oda, Hidekazu; Yamaguchi, Yasuo; Ishibashi, Koichiro; Amano, Hideharu; Usami, Kimiyoshi; Kobayashi, Kazutoshi; Mizutani, Tomoko; Hiramoto, Toshiro.

Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894413.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kamohara, S, Sugii, N, Yamamoto, Y, Makiyama, H, Yamashita, T, Hasegawa, T, Okanishi, S, Yanagita, H, Kadoshima, M, Maekawa, K, Mitani, H, Yamagata, Y, Oda, H, Yamaguchi, Y, Ishibashi, K, Amano, H, Usami, K, Kobayashi, K, Mizutani, T & Hiramoto, T 2014, Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. in Digest of Technical Papers - Symposium on VLSI Technology., 6894413, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, 14/6/9. https://doi.org/10.1109/VLSIT.2014.6894413
Kamohara S, Sugii N, Yamamoto Y, Makiyama H, Yamashita T, Hasegawa T et al. Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894413 https://doi.org/10.1109/VLSIT.2014.6894413
Kamohara, Shiro ; Sugii, Nobuyuki ; Yamamoto, Yoshiki ; Makiyama, Hideki ; Yamashita, Tomohiro ; Hasegawa, Takumi ; Okanishi, Shinobu ; Yanagita, Hiroshi ; Kadoshima, Masaru ; Maekawa, Keiichi ; Mitani, Hitoshi ; Yamagata, Yasushi ; Oda, Hidekazu ; Yamaguchi, Yasuo ; Ishibashi, Koichiro ; Amano, Hideharu ; Usami, Kimiyoshi ; Kobayashi, Kazutoshi ; Mizutani, Tomoko ; Hiramoto, Toshiro. / Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era. Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014.
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