Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer

K. Ueno, A. Sekiguchi, A. Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The vacuum anneal effects of the Cu seed on Cu CVD have been investigated. The vacuum anneal removes the surface oxide of the air-exposed Cu seed and enhances the (111) texture of the seed. The incubation period which has been observed with the air-exposed Cu seed has been eliminated by the vacuum anneal and better film morphology and improved sheet resistance uniformity has been obtained. Epitaxial CVD has been observed on the vacuum annealed seed and led to the enhanced (111) texture.

Original languageEnglish
Title of host publicationProceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages119-121
Number of pages3
ISBN (Electronic)0780342852, 9780780342859
DOIs
Publication statusPublished - 1998 Jan 1
Event1998 IEEE International Interconnect Technology Conference, IITC 1998 - San Firancisco, United States
Duration: 1998 Jun 11998 Jun 3

Publication series

NameProceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Volume1998-June

Other

Other1998 IEEE International Interconnect Technology Conference, IITC 1998
CountryUnited States
CitySan Firancisco
Period98/6/198/6/3

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Ueno, K., Sekiguchi, A., & Kobayashi, A. (1998). Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer. In Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998 (pp. 119-121). (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998; Vol. 1998-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1998.704768