V-band MMIC LNA using superlattice-inserted InP heterojunction FETS

A. Fujihara, H. Miyamoto, K. Yamanoguchi, E. Mizuki, N. Samoto, S. Tanaka

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1dB gain at 60 GHz.

Original languageEnglish
Pages622-625
Number of pages4
Publication statusPublished - 2001 Jan 1
Event2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
Duration: 2001 May 142001 May 18

Conference

Conference2001 International Conference on Indium Phosphide and Related Materials
CountryJapan
CityNara
Period01/5/1401/5/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Fujihara, A., Miyamoto, H., Yamanoguchi, K., Mizuki, E., Samoto, N., & Tanaka, S. (2001). V-band MMIC LNA using superlattice-inserted InP heterojunction FETS. 622-625. Paper presented at 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.