V-band MMIC LNA using superlattice-inserted InP heterojunction FETS

A. Fujihara, H. Miyamoto, K. Yamanoguchi, E. Mizuki, N. Samoto, Shinichi Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1dB gain at 60 GHz.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages622-625
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
Event2001 International Conference on Indium Phosphide and Related Materials - Nara
Duration: 2001 May 142001 May 18

Other

Other2001 International Conference on Indium Phosphide and Related Materials
CityNara
Period01/5/1401/5/18

Fingerprint

Low noise amplifiers
Monolithic microwave integrated circuits
Field effect transistors
extremely high frequencies
low noise
Heterojunctions
heterojunctions
field effect transistors
amplifiers
Ohmic contacts
Coplanar waveguides
Epitaxial layers
Noise figure
electric contacts
waveguides
Networks (circuits)
11-(2-fluoroethyl)estradiol
indium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Fujihara, A., Miyamoto, H., Yamanoguchi, K., Mizuki, E., Samoto, N., & Tanaka, S. (2001). V-band MMIC LNA using superlattice-inserted InP heterojunction FETS. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 622-625)

V-band MMIC LNA using superlattice-inserted InP heterojunction FETS. / Fujihara, A.; Miyamoto, H.; Yamanoguchi, K.; Mizuki, E.; Samoto, N.; Tanaka, Shinichi.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2001. p. 622-625.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujihara, A, Miyamoto, H, Yamanoguchi, K, Mizuki, E, Samoto, N & Tanaka, S 2001, V-band MMIC LNA using superlattice-inserted InP heterojunction FETS. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 622-625, 2001 International Conference on Indium Phosphide and Related Materials, Nara, 01/5/14.
Fujihara A, Miyamoto H, Yamanoguchi K, Mizuki E, Samoto N, Tanaka S. V-band MMIC LNA using superlattice-inserted InP heterojunction FETS. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2001. p. 622-625
Fujihara, A. ; Miyamoto, H. ; Yamanoguchi, K. ; Mizuki, E. ; Samoto, N. ; Tanaka, Shinichi. / V-band MMIC LNA using superlattice-inserted InP heterojunction FETS. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2001. pp. 622-625
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AU - Tanaka, Shinichi

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