Valence-Band Discontinuity at the AIN/Si Interface

Hiroyasu Ishikawa, Baijun Zhang, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.

Original languageEnglish
Pages (from-to)6413-6414
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number10
Publication statusPublished - 2003 Oct
Externally publishedYes

Fingerprint

Valence bands
discontinuity
valence
Conduction bands
Light emitting diodes
X ray photoelectron spectroscopy
conduction bands
Electric potential
light emitting diodes
photoelectron spectroscopy
electric potential
x rays

Keywords

  • AIN
  • Band discontinuity
  • GaN
  • MOCVD
  • Si

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Valence-Band Discontinuity at the AIN/Si Interface. / Ishikawa, Hiroyasu; Zhang, Baijun; Egawa, Takashi; Jimbo, Takashi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 10, 10.2003, p. 6413-6414.

Research output: Contribution to journalArticle

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