The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2003 Oct 1|
- Band discontinuity
ASJC Scopus subject areas
- Physics and Astronomy(all)